Impact of Stacking Fault on the I-V Characteristics of 4H-SiC Schottky Barrier Diode

2015 ◽  
Vol 821-823 ◽  
pp. 563-566
Author(s):  
Hyun Jin Jung ◽  
Seung Bok Yun ◽  
In Ho Kang ◽  
Jeong Hyun Moon ◽  
Won Jeong Kim ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Room Temperature ◽  
Harmful Effect ◽  
Stacking Faults ◽  
Optical Microscope ◽  
Stacking Fault ◽  
Schottky Barrier Diode ◽  
The Other ◽  
Room Temperature Photoluminescence

The influence of stacking faults (SFs) and triangular defects (TDs) on the electrical properties of 4H-SiC Schottky barrier diode (SBD) were investigated. The SF types and locations were distinguished and mapped by using room-temperature photoluminescence (PL) and optical microscope. SBDs were fabricated including the location of SF’s and TD’s. The effects of the types of defects and its area portion in the fabricated SBDs were also investigated. Based on the present data, 3C-TD has more harmful effect rather than the other SFs. The fabricated SBDs including SFs showed that increase of area portion of SF’s also resulted increase of specific on resistance of SBDs.

Structure Analysis of In-Grown Stacking Faults and Investigation of the Cause for High Reverse Current of 4H-SiC Schottky Barrier Diode

2008 ◽  
Vol 600-603 ◽  
pp. 963-966 ◽  
Author(s):  
Shin Harada ◽  
Yasuo Namikawa ◽  
Ryuichi Sugie
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Structure Analysis ◽  
Stacking Faults ◽  
Reverse Current ◽  
Schottky Barrier Diode ◽  
The Other ◽  
Poly Type

Two types of structures related to in-grown SF having a different influence on reverse currents of 4H-SiC SBDs were investigated. One type contained only a single SF formed by 1c of 8H poly-type and showed low reverse currents. The other type was accompanied with short SFs which consisted of 3C poly-type in addition to two SFs formed by 1c of 8H poly-type and showed high reverse currents. SF formed by 1c of 8H poly-type was not the cause of the high reverse current, and we speculate that the barrier height lowering at the short SF attributed to the high reverse currents of SBDs.

Electron microscope studies of the plastic deformation of ternary alloys based on GaAs

1990 ◽  
Vol 48 (4) ◽  
pp. 1120-1120
Author(s):  
R. Haswell ◽  
U. Bangert ◽  
P. Charsley
Keyword(s):  
Plastic Deformation ◽  
Electron Microscope ◽  
Room Temperature ◽  
Stacking Faults ◽  
The Other ◽  
Ternary Alloys ◽  
Dislocation Mobility ◽  
Semiconducting Materials ◽  
Micro Indentation

A knowledge of the behaviour of dislocations in semiconducting materials is essential to the understanding of devices which use them . This work is concerned with dislocations in alloys related to the semiconductor GaAs . Previous work on GaAs has shown that microtwinning occurs on one of the <110> rosette arms after indentation in preference to the other . We have shown that the effect of replacing some of the Ga atoms by Al results in microtwinning in both of the rosette arms.In the work to be reported dislocations in specimens of different compositions of Gax Al(1-x) As and Gax In(1-x) As have been studied by using micro indentation on a (001) face at room temperature . A range of electron microscope techniques have been used to investigate the type of dislocations and stacking faults/microtwins in the rosette arms , which are parallel to the [110] and [10] , as a function of composition for both alloys . Under certain conditions microtwinning occurs in both directions . This will be discussed in terms of the dislocation mobility.

scholarly journals Investigation of electrical properties of PANI/chalcogenide junctions

2009 ◽  
Vol 7 (4) ◽  
pp. 769-773
Author(s):  
Vinodini Shaktawat ◽  
Dinesh Patidar ◽  
Kananbala Sharma ◽  
Narendra Saxena ◽  
Thansewar. Sharma
Keyword(s):  
Electrical Properties ◽  
Room Temperature ◽  
The Other ◽  
Rectification Ratio ◽  
Rectification Effect ◽  
Conducting Polyaniline ◽  
Evaporation Technique ◽  
Chalcogenide Materials ◽  
Vacuum Evaporation Technique ◽  
Protonic Acids

AbstractPure Polyaniline (EB) and Polyaniline doped with different protonic acids (ESs) were chemically synthesized using ammonium peroxydisulphate (APS) as an oxidant. Junctions have been prepared by evaporating chalcogenide materials (ZnSe, CdSe) on conducting polyaniline (EB &amp; ESs) pellets using a vacuum evaporation technique. I–V characteristics of junctions have been studied at room temperature using the Keithley electrometer 6517A. I–V measurements show the rectification effect. A junction of ES[PO43−] may be preferred over the other junctions due to its low ideality factor and maximum rectification ratio.

The Electrical Properties of Au/P3HT/n-Type Si Schottky Barrier Diode

2016 ◽  
Vol 11 (2) ◽  
pp. 214-218
Author(s):  
A. Asimov ◽  
M. Ahmetoğlu ◽  
A. Kirsoy ◽  
M. Özer ◽  
M. Yasin
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Schottky Barrier Diode

Expansion of Stacking Faults in 4H-SiC Epitaxial Layer under Laser Light Excitation during Room Temperature Photoluminescence Mapping

2008 ◽  
Vol 600-603 ◽  
pp. 349-352 ◽  
Author(s):  
Norihiro Hoshino ◽  
Michio Tajima ◽  
M. Naitoh ◽  
Eiichi Okuno ◽  
Shoichi Onda
Keyword(s):  
Laser Beam ◽  
Epitaxial Layer ◽  
Basal Plane ◽  
High Intensity ◽  
Room Temperature ◽  
Stacking Faults ◽  
Scanning Laser ◽  
Epitaxial Layers ◽  
Dislocation Loops ◽  
Room Temperature Photoluminescence

We investigated the expansion of single Shockley stacking faults (SSFs) in a 4H-SiC epitaxial layer under high-intensity scanning laser beam during room temperature photoluminescence mapping, which is similar to the degradation of bipolar pin diodes during forward current injection. In an epitaxial layer on an 8 off-axis (0001) substrate, the SSF-related intensity patterns induced by scanning high-intensity laser beam were classified into two types. The first one was a triangular pattern and the second a pattern which expanded in accordance with the motion of the scanning laser beam. The origins of the SSFs responsible for both patterns are presumably due to the preexisting basal plane dislocations and the dislocation-loops on the basal plane in the epitaxial layer, respectively. On the other hand, most of the SSF-expansion in on-axis (11 2 0) epitaxial layers were similar to the second type in the (0001) epitaxial layer. We, therefore, suggest that the dislocation-loops, which were located close to the surface, were dominant nucleation-sites of the SSFs in the (11 2 0) epitaxial layers.

Analysis of electrical properties and deep level defects in undoped GaN Schottky barrier diode

2013 ◽  
Vol 534 ◽  
pp. 603-608 ◽  
Author(s):  
Koteswara Rao Peta ◽  
Byung-Guon Park ◽  
Sang-Tae Lee ◽  
Moon-Deock Kim ◽  
Jae-Eung Oh ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Deep Level ◽  
Schottky Barrier Diode

Polarized Photoluminescence from Partial Dislocations in 4H-SiC

2014 ◽  
Vol 778-780 ◽  
pp. 319-323
Author(s):  
Rii Hirano ◽  
Michio Tajima ◽  
Hidekazu Tsuchida ◽  
Kohei M. Itoh ◽  
Koji Maeda
Keyword(s):  
Room Temperature ◽  
Stacking Faults ◽  
Wave Functions ◽  
High Power Laser ◽  
Power Laser ◽  
Burgers Vector ◽  
Room Temperature Photoluminescence ◽  
Partial Dislocations ◽  
Peak Energy ◽  
Polarization Characteristics

Polarization characteristics of luminescence from partial dislocations (PDs) in 4H-SiC have been investigated by room-temperature photoluminescence (PL) imaging. After expansion of Shockley stacking faults by high-power laser irradiation, PL from PDs tilted by 6° from their Burgers vector (6°-PDs) was observed with almost the same PL peak energy as that of 30°-Si (g) PDs. The PL from the 30°-Si (g) and 6°-PDs which were mobile under illumination were both found to be polarized perpendicular to their dislocation lines. In contrast, the PL from immobile 30°-C(g) PDs was not polarized. The present results suggest that the carriers bound to the 30°-Si (g) and 6°-PDs have anisotropic wave functions and those bound to 30°-C(g)PDs have isotropic wave functions.

Schottky Barrier Diode Fabricated by MOCVD-Grown Epilayer Using Bis-Trimethylsilylmethane Precursor

2008 ◽  
Vol 600-603 ◽  
pp. 971-974
Author(s):  
Ho Keun Song ◽  
Jong Ho Lee ◽  
Myeong Sook Oh ◽  
Jeong Hyun Moon ◽  
Han Seok Seo ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Grain Boundaries ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Reverse Bias ◽  
Schottky Barrier Diode ◽  
High Quality ◽  
Ohmic Behavior ◽  
Leakage Path ◽  
Crystallographic Characteristics

Schottky barrier diode (SBD) was fabricated by MOCVD using bistrimethylsilylmethane (BTMSM, C7H20Si2) precursor. The 4H-SiC substrates which had different crystallographic characteristics were used for the comparison of the crystallinity effect on the electrical properties of the SBDs. From the measurement of the reverse I-V characteristics of the SBDs with micropipes, it is shown that the origin of the main leakage path and early breakdown (or ohmic behavior in reverse bias) in 4H-SiC SBDs is the grain boundaries caused by the inclusions or other defects. The best performance of SBD were shown in the epilayer grown at 1440 oC using high quality substrate, and the breakdown voltage and reverse leakage current were about 450 V and 10-9 A/cm2, respectively.

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