Optimization of nitrogen plasma source parameters by measurements of emitted light intensity for growth of GaN by molecular beam epitaxy

2013 ◽  
Vol 534 ◽  
pp. 107-110 ◽  
Author(s):  
K. Klosek ◽  
M. Sobanska ◽  
G. Tchutchulashvili ◽  
Z.R. Zytkiewicz ◽  
H. Teisseyre ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Light Intensity ◽  
Molecular Beam ◽  
Source Parameters ◽  
Plasma Source ◽  
Nitrogen Plasma

p‐type CdSe grown by molecular beam epitaxy using a nitrogen plasma source

1994 ◽  
Vol 65 (4) ◽  
pp. 466-468 ◽  
Author(s):  
Takeo Ohtsuka ◽  
Junji Kawamata ◽  
Ziqiang Zhu ◽  
Takafumi Yao
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Plasma Source ◽  
Nitrogen Plasma ◽  
P Type

Heavyp‐doping of ZnTe by molecular beam epitaxy using a nitrogen plasma source

1993 ◽  
Vol 62 (8) ◽  
pp. 840-842 ◽  
Author(s):  
J. Han ◽  
T. S. Stavrinides ◽  
M. Kobayashi ◽  
R. L. Gunshor ◽  
M. M. Hagerott ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Plasma Source ◽  
Nitrogen Plasma

Low Resistance Ohmic Contact on p-type GaN Grown by Plasma-Assisted Molecular Beam Epitaxy

1996 ◽  
Vol 423 ◽  
Author(s):  
Myung C. Yoo ◽  
J. W. Lee ◽  
J. M. Myoung ◽  
K. H. Shim ◽  
K. Kim
Keyword(s):  
Molecular Beam Epitaxy ◽  
Ohmic Contacts ◽  
Doping Concentration ◽  
Molecular Beam ◽  
Plasma Source ◽  
Nitrogen Plasma ◽  
Specific Contact Resistance ◽  
Metal Bilayers ◽  
Auger Microscopy ◽  
P Type

AbstractOhmic contacts on p-type GaN have been investigated. High quality GaN epilayers on cplane sapphire were prepared using plasma-assisted molecular beam epitaxy that utilized an inductively coupled rf nitrogen plasma source and solid source beams. The resulting film thickness and the doping concentration of the grown samples were in the range of 0.7–1.35 μm and 1018 – 1020/cm3, respectively. The metallization consisted of high work function metal bilayers which included a combinations of 25 nm-thick Ni, Ti, Pt and/or Cr and 200 nm-thick Au on the highly p-doped GaN in a transmission line model pattern. Ohmic contacts were formed by alloying the bi-layers using rapid thermal annealing (RTA) at temperatures in the range of 300–700 °C for 1 min under nitrogen ambient. Current-voltage measurements showed that the specific contact resistance was as low as 1.2 × 10 −4 Ω–cm2 for the sample having 1.4 × 1020/cm3p-type doping concentration with a Cr/Au contact annealed at 500 °C for 1 min by RTA. Judging from the scanning Auger microscopy results and the glancing angle x-ray diffraction analysis, this resistance is attributed to Cr diffusion into the GaN layer.

InNAs and GaInNAs self-assembled quantum dots and lasers grown by solid source molecular beam epitaxy

2003 ◽  
Vol 794 ◽  
Author(s):  
Z.Z. Sun ◽  
S.F. Yoon ◽  
K.C. Yew ◽  
B.X. Bo
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
Molecular Beam ◽  
Plasma Source ◽  
Nitrogen Plasma ◽  
Force Microscopy ◽  
Self Assembled ◽  
Dot Density

ABSTRACTSelf-assembled Ga1−xInxNyAs1-y quantum dots were grown on GaAs by solid source molecular beam epitaxy (SSMBE). Introduction of N was achieved by a RF Nitrogen plasma source. Formation of quantum dots by S-K growth mode is confirmed by observation of standard 2D-3D RHEED pattern transition. Atomic force microscopy (AFM) and photoluminescence (PL) measurements were used to characterize the structure and optical properties of GaInNAs quantum dots. High GaInNAs quantum dot density (1010∼1011cm−2) was obtained for different In and N composition (0.3≤ x ≤1, y≤0.01). The effect of surface coverage on dot density, dot size, and optical properties was studied in detail. Adjusting the bandgap confinement by incorporating a GaNAs strain-reduction layer into the GaInNAs dot layer was found to extend the emission wavelength by 170nm. Room temperature pulsed operation is demonstrated for a Ga0.5In0.5N0.01As0.99 quantum dot laser emitting at ∼1.1μm.

Some aspects of GaN growth on GaAs(100) substrates using molecular beam epitaxy with an RF activated nitrogen-plasma source

1995 ◽  
Vol 155 (3-4) ◽  
pp. 157-163 ◽  
Author(s):  
S.E. Hooper ◽  
C.T. Foxon ◽  
T.S. Cheng ◽  
L.C. Jenkins ◽  
D.E. Lacklison ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Plasma Source ◽  
Nitrogen Plasma

Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy

2018 ◽  
Vol 52 (12) ◽  
pp. 1529-1533 ◽  
Author(s):  
A. M. Mizerov ◽  
S. N. Timoshnev ◽  
M. S. Sobolev ◽  
E. V. Nikitina ◽  
K. Yu. Shubina ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nitrogen Plasma ◽  
Initial Stage

THE STUDY OF Pd SCHOTTKY CONTACT ON POROUS GaN FOR UV METAL–SEMICONDUCTOR–METAL (MSM) PHOTODETECTORS

2007 ◽  
Vol 16 (04) ◽  
pp. 497-503 ◽  
Author(s):  
L. S. CHUAH ◽  
Z. HASSAN ◽  
H. ABU HASSAN
Keyword(s):  
Molecular Beam Epitaxy ◽  
Tensile Stress ◽  
Molecular Beam ◽  
Schottky Contact ◽  
Nitrogen Plasma ◽  
Porous Sample ◽  
Optical Studies ◽  
High Quality ◽  
Metal Semiconductor Metal ◽  
Msm Photodetectors

High quality unintentionally doped n-type GaN layers were grown on Si (111) substrate using AlN (about 200 nm) as buffer layer by radio frequency (RF) nitrogen plasma-assisted molecular beam epitaxy (MBE). This paper presents the structural and optical studies of porous GaN sample compared to the corresponding as-grown GaN. Metal–semiconductor–metal (MSM) photodiode was fabricated on the samples. For as-grown GaN-based MSM, the detector shows a sharp cut-off wavelength at 362 nm, with a maximum responsivity of 0.254 A/W achieved at 360 nm. For porous GaN MSM detector, a sharp cut-off wavelength at 360 nm with a maximum responsivity of 0.655 A/W was achieved at 359 nm. Both the detectors show a little decrease in responsivity in the UV spectral region. The MSM photodiode based on porous GaN shows enhanced (2×) magnitude of responsivity relative to the as-grown GaN MSM photodiode. Enhancement of responsivity can be attributed to the relaxation of tensile stress and reduction of surface pit density in the porous sample.

Surface reconstructions of cubic gallium nitride (001) grown by radio frequency nitrogen plasma molecular beam epitaxy under gallium-rich conditions

2006 ◽  
Vol 100 (8) ◽  
pp. 083516 ◽  
Author(s):  
Muhammad B. Haider ◽  
Rong Yang ◽  
Costel Constantin ◽  
Erdong Lu ◽  
Arthur R. Smith ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Molecular Beam Epitaxy ◽  
Radio Frequency ◽  
Molecular Beam ◽  
Nitrogen Plasma ◽  
Surface Reconstructions
Sign in / Sign up

Export Citation Format

Share Document