Structures and electrical properties of Mn- and Co-doped lead-free ferroelectric K0.5Na0.5NbO3 films prepared by a chemical solution deposition method

K 0.5 Na 0.5 NbO 3– SrTiO 3 (KNN–STO) thin films of different compositions were prepared by the chemical solution deposition method. While structural investigations confirmed the formation of perovskite solid solution in all developed films, dielectric experiments revealed a relaxor broad dispersive maximum in the sample with 15 mol% of STO, exhibiting for a thin film high ε′ ~ 330 at ~ 210 K. The history-dependent effects of this relaxor sample were compared to those of KNN–STO ceramics and, furthermore, shown to be much weaker than in widely used lead-based ferroelectric and relaxor ( Pb , La )( Zr , Ti ) O 3 ceramics: While fatigue endurance results revealed a slight drop in polarization after 3 × 105 switching cycles, the results of aging of the dielectric constant revealed no notable decrease in its values after 106 s.

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Electrical Properties of (Ca,Sr)Bi4Ti4O15Thin Films Fabricated Using a Chemical Solution Deposition Method

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.5990 ◽

2003 ◽

Vol 42 (Part 1, No. 9B) ◽

pp. 5990-5993 ◽

Cited By ~ 14

Author(s):

Hiroshi Uchida ◽

Keiko Sakurai ◽

Isao Okada ◽

Hirofumi Matsuda ◽

Takashi Iijima ◽

...

Keyword(s):

Electrical Properties ◽

Chemical Solution Deposition ◽

Deposition Method ◽

Chemical Solution ◽

Solution Deposition ◽

Chemical Solution Deposition Method

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Structural and electrical properties of LaNiO3 thin films grown on (100) and (001) oriented SrLaAlO4 substrates by chemical solution deposition method

MRS Proceedings ◽

10.1557/opl.2014.116 ◽

2014 ◽

Vol 1633 ◽

pp. 25-33 ◽

Cited By ~ 1

Author(s):

D. S. L. Pontes ◽

F. M Pontes ◽

Marcelo A. Pereira-da-Silva ◽

O. M. Berengue ◽

A. J. Chiquito ◽

...

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Single Crystal ◽

Chemical Solution Deposition ◽

Deposition Method ◽

Chemical Solution ◽

X Ray Diffraction ◽

Solution Deposition ◽

X Ray ◽

Chemical Solution Deposition Method

ABSTRACTLaNiO3 thin films were deposited on SrLaAlO4 (100) and SrLaAlO4 (001) single crystal substrates by a chemical solution deposition method and heat-treated in oxygen atmosphere at 700°C in tube oven. Structural, morphological, and electrical properties of the LaNiO3 thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM), and electrical resistivity as temperature function (Hall measurements). The X-ray diffraction data indicated good crystallinity and a structural preferential orientation. The LaNiO3 thin films have a very flat surface and no droplet was found on their surfaces. Samples of LaNiO3 grown onto (100) and (001) oriented SrLaAlO4 single crystal substrates reveled average grain size by AFM approximately 15-30 and 20-35 nm, respectively. Transport characteristics observed were clearly dependent upon the substrate orientation which exhibited a metal-to-insulator transition. The underlying mechanism is a result of competition between the mobility edge and the Fermi energy through the occupation of electron states which in turn is controlled by the disorder level induced by different growth surfaces.

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