Regulation of the phase transition temperature of VO2 thin films deposited by reactive magnetron sputtering without doping

2014 ◽  
Vol 562 ◽  
pp. 314-318 ◽  
Author(s):  
Meng Jiang ◽  
Xun Cao ◽  
Shanhu Bao ◽  
Huaijuan Zhou ◽  
Ping Jin
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Transition Temperature ◽  
Magnetron Sputtering ◽  
Phase Transition Temperature ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Vo2 Thin Films

Effects of annealing ambient on oxygen vacancies and phase transition temperature of VO2 thin films

RSC Advances ◽  
2016 ◽  
Vol 6 (83) ◽  
pp. 79383-79388 ◽  
Author(s):  
H. Y. Xu ◽  
Y. H. Huang ◽  
S. Liu ◽  
K. W. Xu ◽  
F. Ma ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Transition Temperature ◽  
Magnetron Sputtering ◽  
Direct Current ◽  
Room Temperature ◽  
Oxygen Vacancies ◽  
Dc Magnetron Sputtering ◽  
Si Substrates ◽  
Vo2 Thin Films

VO2 thin films are prepared on Si substrates by direct-current (DC) magnetron sputtering at room temperature and annealed in vacuum at different argon pressures.

Structure Characterization of W-Doped Vanadium Oxide Thin Films Prepared by Reactive Magnetron Sputtering

2013 ◽  
Vol 690-693 ◽  
pp. 1694-1697
Author(s):  
Shuang Chen ◽  
Li Fang Zhang ◽  
Shu Juan Xiao ◽  
Cui Zhi Dong
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Magnetron Sputtering ◽  
Vanadium Oxide ◽  
Reactive Magnetron Sputtering ◽  
Structure Characterization ◽  
Root Mean Square Roughness ◽  
Reactive Magnetron ◽  
Oxide Thin Films ◽  
Vanadium Oxide Thin Films

W-doped Vanadium oxide thin films were prepared on the substrates of SiO2 glass, float glass and Si (100) by reactive magnetron sputtering after annealing in vacuum. The structure, morphology and phase transition were characterized by X-ray diffractometer, atomic force microscopy (AFM) and differential thermal analysis (DTA), respectively. The results show that, the major phase of W-doped films on SiO2 glass is VO2.Dopant reduce the phase transition temperature of VO2 thin films to 21.9°C. The root-mean-square roughness of the film increase for the longer deposition time.

Sign in / Sign up

Export Citation Format

Share Document