Silicon nitride and intrinsic amorphous silicon double antireflection coatings for thin-film solar cells on foreign substrates

2015 ◽  
Vol 583 ◽  
pp. 25-33 ◽  
Author(s):  
Da Li ◽  
Thomas Kunz ◽  
Nadine Wolf ◽  
Jan Philipp Liebig ◽  
Stephan Wittmann ◽  
...  
2011 ◽  
Vol 57 (1) ◽  
pp. 73-75 ◽  
Author(s):  
M.C. Wang ◽  
T.C. Chang ◽  
S.W. Tsao ◽  
Y.Z. Chen ◽  
S.C. Tseng ◽  
...  

2019 ◽  
Vol 27 (24) ◽  
pp. 34542 ◽  
Author(s):  
Meiwei Kong ◽  
Jiaming Lin ◽  
Chun Hong Kang ◽  
Chao Shen ◽  
Yujian Guo ◽  
...  

2011 ◽  
Vol 1321 ◽  
Author(s):  
P. H. Cheng ◽  
S. W. Liang ◽  
Y. P. Lin ◽  
H. J. Hsu ◽  
C. H. Hsu ◽  
...  

ABSTRACTThe hydrogenated amorphous silicon (a-Si:H) single-junction thin-film solar cells were fabricated on SnO2:F-coated glasses by plasma-enhanced chemical vapor deposition (PECVD) system. The boron-doped amorphous silicon carbide (a-SiC:H) was served as the window layer (p-layer) and the undoped a-SiC:H was used as a buffer layer (b-layer). The optimization of the p/b/i/n thin-films in a-Si:H solar cells have been carried out and discussed. Considering the effects of light absorption, electron-hole extraction and light-induced degradation, the thicknesses of p, b, n and i layers have been optimized. The optimal a-Si:H thin-film solar cell having an efficiency of 9.46% was achieved, with VOC=906 mV, JSC=14.42 mA/cm2 and FF=72.36%.


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