scholarly journals Dependence of Ga-doped ZnO thin film properties on different sputtering process parameters: Substrate temperature, sputtering pressure and bias voltage

2015 ◽  
Vol 586 ◽  
pp. 13-21 ◽  
Author(s):  
M.V. Castro ◽  
C.J. Tavares
2016 ◽  
Vol 5 (7) ◽  
pp. N40-N42 ◽  
Author(s):  
Chun-Cheng Lin ◽  
Cheng-Shong Hong ◽  
Chih-Yu Huang ◽  
Yi-Chun Chen ◽  
Sheng-Yuan Chu

2015 ◽  
Vol 47 (12) ◽  
pp. 3655-3665
Author(s):  
Musbah Babikier ◽  
Qian Li ◽  
Jinzhong Wang ◽  
Dunbo Wang ◽  
Jianming Sun ◽  
...  

2020 ◽  
Vol 31 (9) ◽  
pp. 6948-6955
Author(s):  
Mustafa Özgür ◽  
Suat Pat ◽  
Reza Mohammadigharehbagh ◽  
Uğur Demirkol ◽  
Nihan Akkurt ◽  
...  

2020 ◽  
Vol 217 (24) ◽  
pp. 2000537
Author(s):  
Shailendra Kr. Singh ◽  
Uttam Kr. Samanta ◽  
Anirban Dhar ◽  
Mrinmay Pal ◽  
Mukul Chandra Paul

2006 ◽  
Vol 320 ◽  
pp. 113-116
Author(s):  
Shigeru Tanaka ◽  
Yukari Ishikawa ◽  
Naoki Ohashi ◽  
Junichi Niitsuma ◽  
Takashi Sekiguchi ◽  
...  

We have obtained Er-doped ZnO thin film in a micropattern of reverse trapezoids processed on Si substrate by sputtering and ultrafine polishing techniques. Near-infrared light emission was detected successfully from the thin film filling a single micropit with 10 μm square. Transmission electron microscopy (TEM) observation showed epitaxial growth of ZnO crystals along the curvature of the micropit.


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