Formation of Erbia-Yttria double layer fabricated by metal organic chemical vapor deposition process with changing oxygen flow rates

2019 ◽  
Vol 689 ◽  
pp. 137455 ◽  
Author(s):  
Seungwon Lee ◽  
Kenji Matsuda ◽  
Masaki Tanaka ◽  
Taiki Tsuchiya ◽  
Katsuhiko Nishimura ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Double Layer ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Chemical Vapor Deposition Process ◽  
Organic Chemical ◽  
Flow Rates ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Half-sandwich cobalt complexes in the metal-organic chemical vapor deposition process

2015 ◽  
Vol 578 ◽  
pp. 180-184 ◽  
Author(s):  
Colin Georgi ◽  
Marko Hapke ◽  
Indre Thiel ◽  
Alexander Hildebrandt ◽  
Thomas Waechtler ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Cobalt Complexes ◽  
Deposition Process ◽  
Chemical Vapor Deposition Process ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Half Sandwich

Phase Control of Ga2O3 Thin Films Grown by Metal-Organic Chemical Vapor Deposition

2019 ◽  
Vol 954 ◽  
pp. 72-76
Author(s):  
Ze Qi Li ◽  
Zi Min Chen ◽  
Wei Qu Chen ◽  
Gang Wang
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Flow Rates ◽  
Growth Method ◽  
Metal Organic ◽  
Step Growth ◽  
Organic Chemical Vapor Deposition

In this paper, Ga2O3 thin films were grown on c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). There was phase transition for samples grown with different flow rates of triethyl-gallium (TEGa) and deionized water (H2O). It is found that ε-Ga2O3 is difficult to coalesce and the phase mixture by β­Ga2O3 takes place if the flow rates of TEGa and H2O are too high. However, by using multiple-step growth method, the film became fully coalesced. High-quality ε-Ga2O3 thin film with atomically flat surface and multilayer morphology was obtained.

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