scholarly journals Retraction notice to “Synthesis and Characterization of Chalcopyrite Quaternary Semiconductor Cu (InxGa1-x) S2 Nanowires by Electrospun Route” Thin Solid Films, 519/11 (2011) 3658-3662

2021 ◽  
Vol 733 ◽  
pp. 138631
Author(s):  
Lin-Jer Chen ◽  
Jiunn-Der Liao ◽  
Yu-Ju Chuang
2006 ◽  
Vol 252 (15) ◽  
pp. 5602-5606 ◽  
Author(s):  
J.J. Kim ◽  
E. Ikenaga ◽  
M. Kobata ◽  
A. Takeuchi ◽  
M. Awaji ◽  
...  

Author(s):  
Mikhail V. Gapanovich ◽  
Natalia A. Tikhonina ◽  
Tatiana S. Kokovina ◽  
Dmitry N. Varseev ◽  
Vladimir V. Rakitin ◽  
...  

Abstract. The effect of bath temperature (60-90 °C) on structural, optical and electrical propertiesof CdS thin films deposited by chemical bath deposition (CBD) at a constant precursorconcentration and deposition time was studied. From the XRD analysis, it was found that thestructure of CdS thin fi lms varied with temperature. At lower temperature hexagonal structurewas dominated while at high temperature, the cubic structure was prominent. The band gap ofthe as-prepared CdS thin fi lms was calculated from the UV-Vis spectroscopic data, and it wasfound to be decreased with the increase of temperature. The resistivity of the CdS thin fi lms alsodecreased with the increase in temperature.       REFERENCES1. Kumar S., Sharma P., Sharma V. CdS nanofi lms: effect of deposition temperature on morphology andoptical band gap. Physica Scripta, 2013, v. 88(4), p. 045603. DOI: https://doi.org/10.1088/0031-8949/88/04/0456032. Rondiyaa S., Rokadea A., Gabhalea B., Pandharkara S., Chaudharia M., Dateb A., et al. Effectof bath temperature on optical and morphology properties of CdS thin fi lms grown by chemical bathdeposition. Energy Procedia, 2017, v. 110, pp. 202–209. DOI: https://doi.org/10.1016/j.egypro.2017.03.1283. Fangyang Liu, Yanqing Lai, Jun Liu, Bo Wang, Sanshuang Kuang, Zhian Zhang, et al. Characterizationof chemical bath deposited CdS thin fi lms at different deposition temperature. J. Alloys Compd., 2010,v. 493(1–2), pp. 305–308. DOI: https://doi.org/10.1016/j.jallcom.2009.12.0884. Hariech S., Aida M. S., Bougdira J., Belmahi M., Medjahdi G., Genиve D., et al. Cadmium sulfi de thinfi lms growth by chemical bath deposition. J. Semicond., 2018, v. 39(3), p. 034004. DOI: https://doi.org/10.1088/1674-4926/39/3/0340045. Mane R. S., Lokhande C. D. Chemical deposition method for metal chalcogenide thin fi lms. J. Mater.Chem. Phys., 2000, v. 65(1), p. 1–31. DOI: https://doi.org/10.1016/s0254-0584(00)00217-06. Hodes G. Chemical solution deposition of semiconductor fi lms. Monograph, Boca Raton, CRCPress, 2002, 388 p. DOI: https://doi.org/10.1201/97802039090967. George P. J., Sanchez-Juarez A., Nair P. K. Modifi cation of electrical, optical and crystalline propertiesof chemically deposited CdS fi lms by thermal diffusion of indium and tin. Semicond. Sci. Technol., 1996, v.11(7), pp. 1090–1095. DOI: https://doi.org/10.1088/0268-1242/11/7/0218. Oliva A. I., Solis-Canto O., Castro-Rodriguez R., Quintana P. Formation of the band gap energy on CdSthin fi lms growth by two different techniques Thin Solid Films, 2001, v. 391(1), pp. 28–35. DOI: https://doi.org/10.1016/s0040-6090(01)00830-69. Lejmi N., Savadogo O. The effect of heteropolyacids and isopolyacids on the properties ofchemically bath deposited CdS thin fi lms. Sol. Energy Mater. Sol. Cells, 2001, v. 70(1), pp. 71–83. DOI: https://doi.org/10.1016/s0927-0248(00)00412-810. Gray D.E. American Institute of Physics Handbook. 3rd Edition, McGraw-Hill, New York, pp. 4–58.11. Ravi Kant Choubey, Dipti Desai, Kale S. N., Sunil Kumar. Effect of annealing treatment anddeposition temperature on CdS thin fi lms for CIGS solar cells applications. J. Mater. Sci: Mater. in Elec.,2016, v. 27(8), pp. 7890–7898. DOI: https://doi.org/10.1007/s10854-016-4780-212. Lo Y. S., Choubey R. K., Yu W. C., Hsu W. T., Lan C. W. Shallow bath chemical deposition of CdSthin fi lm. Thin Solid Films, 2011, v. 520(1), pp. 217-223. DOI: https://doi.org/10.1016/j.tsf.2011.07.03513. Cortes A., Gomez H., Marotti R. E., Riveros G., Dalchiele E. A. Grain size dependence of the bandgapin chemical bath deposited CdS thin fi lms. Sol. Energy Mater. Sol. Cells, 2004, v. 82(1-2), pp. 21–34. DOI:https://doi.org/10.1016/j.solmat.2004.01.002 14. Ahmad F. R., Yakimov A., Davis R. J., Her J. H., Cournoyer J. R., Ayensu N. M. Effect of thermal annealingon the properties of cadmium sulfi de deposited via chemical bath deposition. Thin Solid Films, 2013,v. 535, pp. 166–170. DOI: https://doi.org/10.1016/j.tsf.2012.10.08515. Rakhshani A. E., Al-Azab A. S. Characterization of CdS fi lms prepared by chemical-bath deposition.J. Phys. Condens. Matter., 2000, v. 12, pp. 8745–8756. DOI: https://doi.org/10.1088/0953-8984/12/40/31616. Al Kuhaimi S. A. // Vacuum, 1998, v. 51, pp. 349–55.17. Zelaya-Angel O., Alvarado-Gil J. J., Lozada-Morales R., Vargas H., Ferreira da Silva A. Band-gapshift in CdS semiconductor by photoacoustic spectroscopy: Evidence of a cubic to hexagonal lattice transition.Appl. Phys. Lett., 1994, v. 64(3), pp. 291–293. DOI: https://doi.org/10.1063/1.11118418. Chopra K. L. Thin Film Phenomena. McGraw-Hill, New York, 1969, 266 p.19. Pattabi M., Uchil J. Synthesis of cadmium sulphide nanoparticles. Sol. Energy Mater. Sol. Cells, 2000,v. 63(4), pp. 309–314. DOI: https://doi.org/10.1016/s0927-0248(00)00050-720. Hani Khallaf, Isaiah O. Oladeji, Guangyu Chai, Lee Chow. Characterization of CdS thin fi lms grown bychemical bath deposition using four different cadmium sources. Thin Solid Films, 2008, v. 516(21), pp. 7306–7312. DOI: https://doi.org/10.1016/j.tsf.2008.01.00421. Sasikala G., Thilakan P., Subramanian C. Modifi cation in the chemical bath deposition apparatus,growth and characterization of CdS semiconducting thin fi lms for photovoltaic applications. Sol. Ener gyMater. Sol. Cells, 2000, v. 62(3), pp. 275–293. DOI: https://doi.org/10.1016/s0927-0248(99)00170-122. Toma A., Vigil O., Alvarado-Gil J. J., Lozada-Morales R., Zelaya-Angel O., Vargas H., et al. Infl uenceof thermal annealings in different atmospheres on the band-gap shift and resistivity of CdS thin fi lms. J. Appl.Phys., 1995, v. 78(4), p. 2204–2207. DOI: https://doi.org/10.1063/1.360136


2009 ◽  
Vol 517 (15) ◽  
pp. 4491 ◽  
Author(s):  
A.M.C. Ng ◽  
K.Y. Cheung ◽  
M.K. Fung ◽  
A.B. Djurišić ◽  
W.K. Chan

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