Deposition temperature effect on the electric and dielectric properties of InSbSe3 thin films

Pb0.65Ba0.35ZrO3 (PBZ) thin films have been grown on MgO (001) substrates by pulsed-laser deposition (PLD). We have compared the structural and dielectric properties of PBZ films grown at various temperatures. A highly c-axis orientation has appeared at PBZ film grown at the deposition temperature of 550oC. The c-axis oriented PBZ film has also shown the largest tunability among all the PBZ films in capacitance-voltage measurements. The tunability and dielectric loss of the PBZ film was 20% and 0.00959, respectively. In addition, we have compared the temperature coefficient of capacitance (TCC) of a PBZ film with that of a Ba0.5Sr0.5TiO3 (BST) film which is a well-known material applicable to tunable microwave devices. We have confirmed that TCC value of a PBZ thin film was three-times smaller than that of a BST thin film.

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Systematic Investigation on Deposition Temperature Effect of Ni1–xO Thin Films for Uncooled Infrared Image Sensor Applications

IEEE Sensors Journal ◽

10.1109/jsen.2015.2474737 ◽

2015 ◽

Vol 15 (12) ◽

pp. 7234-7241 ◽

Cited By ~ 6

Author(s):

In-Ku Kang ◽

Y. Ashok Kumar Reddy ◽

Young Bong Shin ◽

Hee Chul Lee

Keyword(s):

Thin Films ◽

Temperature Effect ◽

Deposition Temperature ◽

Infrared Image ◽

Image Sensor ◽

Systematic Investigation ◽

Sensor Applications

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Deposition temperature effect on structural and gas sensing properties of TeO2 thin films

International Journal of Microstructure and Materials Properties ◽

10.1504/ijmmp.2015.074997 ◽

2015 ◽

Vol 10 (5/6) ◽

pp. 463 ◽

Cited By ~ 1

Author(s):

M. Manouchehrian

Keyword(s):

Thin Films ◽

Temperature Effect ◽

Deposition Temperature ◽

Gas Sensing ◽

Sensing Properties ◽

Gas Sensing Properties

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Dielectric Properties Analysis in Paraelectric ZrTiO4 Thin Films

MRS Proceedings ◽

10.1557/proc-666-f3.7 ◽

2001 ◽

Vol 666 ◽

Author(s):

Kyunghae Kim ◽

Jinhee Heo ◽

Taeseok Kim ◽

Byungwoo Park ◽

Junsin Yi

Keyword(s):

Thin Films ◽

Dielectric Properties ◽

Equivalent Circuit ◽

Deposition Temperature ◽

Equivalent Circuit Model ◽

Reactive Sputtering ◽

Dielectric Constants ◽

Dielectric Losses ◽

Post Annealing ◽

Dc Magnetron Reactive Sputtering

ABSTRACTThe dielectric constants and dielectric losses of ZrTiO4 thin films deposited by DC magnetron reactive sputtering were investigated. The paraelectric properties were measured in the 100kHz range and compared with an equivalent circuit model. As the deposition temperature increased (up to 600°C), the dielectric losses (tanσ) decreased (down to 0.017±0.007), while the dielectric constants (ε) were in the range of 35±7. Post annealing at 800°C in oxygen for 2h reduced tanσ down to 0.005±0.001, higher than those of well-sintered bulk ZrTiO4.

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