An AlGaN/AlN ultraviolet photodetector with metal-semiconductor-metal structure is fabricated on n type 4H-SiC substrate, which is conventionally epitaxial by metal-organic chemical vapor deposition (MOCVD). The MSM structure is composed of two interdigitated fingers usually formed by Schottky contact which deposited metal with high work function metal by e-beam metallization and thermal evaporator on high resistance layers. This type of MSM has potential advantages, including ultra low dark current because of its rectifying contacts. The current Characteristics are revealed in this paper. A reference sample of AlGaN/GaN heterostructure with two-dimensional electron gas (2DEG) is also fabricated for comparision.
Comment on “Thermally stable Ir Schottky contact on AlGaN/GaN heterostructure” [Appl. Phys. Lett. 82, 391 (2003)]