The leakage current mechanisms in the Schottky diode with a thin Al layer insertion between Al
                    0.245
                    Ga
                    0.755
                    N/GaN heterostructure and Ni/Au Schottky contact

The effect of soft X-ray irradiation to the Schottky diode properties was analyzed in this paper. The built-in voltage, leakage current, and work function of Schottky diode were investigated. The current-voltage characteristics of the Schottky diode are measured at room temperature. After irradiation at 70 keV for 55 seconds the forward current and leakage current are increase slightly. On the other hand, the built-in voltage is decrease from the initial value about 0.12 V. Consequently, this method can cause the Schottky diode has low power consumption. The results show that soft X-ray can improve the characteristics of Schottky diode.

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High Temperature capable SiC Schottky diodes, based on buried grid design.

Additional Conferences (Device Packaging HiTEC HiTEN & CICMT) ◽

10.4071/hitec-tp11 ◽

2014 ◽

Vol 2014 (HITEC) ◽

pp. 000058-000060

Author(s):

Tomas Hjort ◽

Adolf Schöner ◽

Andy Zhang ◽

Mietek Bakowski ◽

Jang-Kwon Lim ◽

...

Keyword(s):

High Temperature ◽

Schottky Barrier ◽

Leakage Current ◽

Schottky Diode ◽

Schottky Diodes ◽

Electrical Characteristics ◽

Schottky Barrier Diodes ◽

Grid Design ◽

High Temperature Operation

Electrical characteristics of 4H-SiC Schottky barrier diodes, based on buried grid design are presented. The diodes, rated to 1200V/10A and assembled into high temperature capable TO254 packages, have been tested and studied up to 250°C. Compared to conventional SiC Schottky diodes, Ascatron's buried grid SiC Schottky diode demonstrates several orders of magnitude reduced leakage current at high temperature operation.

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Extrinsic Gettering with Epitaxial Misfit Dislocations

MRS Proceedings ◽

10.1557/proc-36-61 ◽

1984 ◽

Vol 36 ◽

Cited By ~ 2

Author(s):

Ali S. M. Salih ◽

W. Maszara ◽

H. J. Kim ◽

G. A. Rozgonyi

Keyword(s):

Dislocation Density ◽

Leakage Current ◽

Schottky Diode ◽

Impurity Concentration ◽

Active Surface ◽

Epitaxial Layers ◽

Misfit Dislocations ◽

Chemical Analyses ◽

Defect Reactions ◽

Metallic Species

ABSTRACTNew results are presented on Ge doped Si epitaxial layers which contain interfacial misfit dislocations. Microscopic and chemical analyses showed the preferential gettering of several metallic species (Au, Cu, Ni, and Fe) at the misfit dislocations with semiquantitative correlation between dislocation density and the captured impurity concentration. Wafer curvature was measured and shown to be less than that for typical Si3N4 and SiO2 layers used in IC fabrication. The reduction of Schottky diode leakage current has been clearly demonstrated and attributed to gettering of residual impurities, as well as signifying that, the active surface device region is not deleteriously affected by spurious defect reactions at the buried epitaxial interface.

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