Conductance calculation of slot channels in laminar gas flow regime at small pressure difference

Vacuum ◽  
2014 ◽  
Vol 99 ◽  
pp. 303-306 ◽  
Author(s):  
S. Salikeev ◽  
A. Burmistrov ◽  
M. Bronshtein ◽  
M. Fomina
Vacuum ◽  
2014 ◽  
Vol 107 ◽  
pp. 178-183 ◽  
Author(s):  
S. Salikeev ◽  
A. Burmistrov ◽  
M. Bronshtein ◽  
M. Fomina ◽  
A. Raykov

2012 ◽  
Vol 2012 ◽  
pp. 1-12 ◽  
Author(s):  
V. G. Bessergenev ◽  
M. C. Mateus ◽  
D. A. Vasconcelos ◽  
J. F. M. L. Mariano ◽  
A. M. Botelho do Rego ◽  
...  

The TiO2thin films were prepared using Ti(dpm)2(OPri)2and Ti(OPri)4(dpm = 2,2,6,6-tetramethylheptane-3,5-dione,Pri= isopropyl) as the precursors. The volatile compounds Fe[(C2H5)2NCS2]3and [(CH3)C]2S2were used to prepare doped TiO2films. The synthesis was done in vacuum or in the presence of Ar and O2. The pressure in the CVD chamber was varied between1.2×10−4 mbar and 0.1 mbar, with the system working either in the molecular beam or gas flow regime. Physical, chemical, and photocatalytic properties of the (Fe, S)-doped TiO2films were studied. Those TiO2:(Fe, S) films prepared from the Ti(OPri)4precursor show increased photocatalytic activities, very close to those of Degussa P25 powder in UV region.


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