Anomalous electrical bistability in lateral grain rich polycrystalline molybdenum disulfide thin films

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pp. 667-674 ◽  
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Pankaj Kumar ◽  
Michael L. Free
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Vol 68 (16) ◽  
pp. 2192-2194 ◽  
Author(s):  
H. J. Gao ◽  
Z. Q. Xue ◽  
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Vol 154 (8) ◽  
pp. D383 ◽  
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O. Ramdani ◽  
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pp. 3842-3847 ◽  
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Martha Isabel Serna ◽  
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Mahmoud Baniasadi ◽  
...  

We report a simple and selective solution method to prepare molybdenum disulfide (MoS2) thin films for functional thin film transistors (TFTs).


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