Surface Raman spectroscopy as a versatile technique to study methanol oxidation on rough Pt electrodes

2000 ◽  
Vol 46 (2-3) ◽  
pp. 193-205 ◽  
Author(s):  
B. Ren ◽  
X.Q. Li ◽  
C.X. She ◽  
D.Y. Wu ◽  
Z.Q. Tian
Keyword(s):  
Raman Spectroscopy ◽  
Methanol Oxidation ◽  
Pt Electrodes ◽  
Versatile Technique

In situ Raman spectroscopy studies on the methanol oxidation over silver surface

1997 ◽  
Vol 120 (1-2) ◽  
pp. 99-105 ◽  
Author(s):  
Jinhai Wang ◽  
Xinhua Xu ◽  
Jingfa Deng ◽  
Yuanyan Liao ◽  
Bifeng Hong
Keyword(s):  
Raman Spectroscopy ◽  
Methanol Oxidation ◽  
Silver Surface ◽  
In Situ Raman Spectroscopy ◽  
In Situ Raman ◽  
Spectroscopy Studies

Methanol Oxidation on Ru-Modified Preferentially Oriented Pt Electrodes in Acidic Medium

2004 ◽  
Vol 151 (6) ◽  
pp. F141 ◽  
Author(s):  
A. A. El-Shafei ◽  
R. Hoyer ◽  
L. A. Kibler ◽  
D. M. Kolb
Keyword(s):  
Methanol Oxidation ◽  
Acidic Medium ◽  
Pt Electrodes

Particle Size Effect: Methanol Oxidation on Supported Pt Catalysts

2005 ◽  
Vol 494 ◽  
pp. 229-234 ◽  
Author(s):  
A.V. Tripković ◽  
V. Jovanović ◽  
J.D. Lović ◽  
K.Dj. Popović ◽  
A. Kowal
Keyword(s):  
Particle Size ◽  
Size Effect ◽  
Single Crystal ◽  
Methanol Oxidation ◽  
Catalyst Activity ◽  
Particle Size Effect ◽  
Pt Catalysts ◽  
Supported Pt Catalysts ◽  
Pt Electrodes

The methanol oxidation was studied at two differently prepared supported Pt electrodes (Pt-C/GC and Pt/GC) in 0.5 M H2SO4 and 0.1 M NaOH. The supported Pt electrodes were characterized by AFM, STM TEM and HRTEM. The higher activity of Pt-C/GC than of Pt/GC catalyst, as well as negligible differences in the activities between the supported Pt catalysts and the corresponding single crystal electrodes oriented as the sites in the catalyst deposits in which Pt particles are dominant, clearly suggest the influence of the particle size effect on the catalyst activity.

Stress Metrology : The challenge for the next generation of engineered wafers

2004 ◽  
Vol 809 ◽  
Author(s):  
Antoine Tiberj ◽  
Vincent Paillard ◽  
Cécile Aulnette ◽  
Nicolas Daval ◽  
Konstantin K. Bourdelle ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Small Strain ◽  
Silicon On Insulator ◽  
Next Generation ◽  
Macroscopic Scale ◽  
Unique Method ◽  
Line Process ◽  
Versatile Technique ◽  
Strain Modulation ◽  
First Time

ABSTRACTRaman spectroscopy is a powerful and versatile technique for stress measurements in complex stacks of thin crystalline layers at macroscopic and microscopic scales. Using such a technique we show that thick SiGe layers epitaxially grown using graded buffer method are fully relaxed (>95%) at a macroscopic scale but exhibit a small strain modulation at a microscopic scale. For the first time we report the results of Raman micro-mapping of stress distribution in SGOI wafers produced by Smart Cut™ technology. We conclude that Smart Cut™ is a unique method to manufacture the next generation of engineered wafers that can combine strained and/or relaxed SiGe alloys, Si and Ge films, while keeping their initial strain properties at both scales. It is important to develop Raman spectroscopy tool for in-line process control in fabrication of strained Silicon On Insulator (sSOI) wafers.

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