In situ measurements and growth kinetics of silicon carbide chemical vapor deposition from methyltrichlorosilane

2000 ◽  
Vol 219 (3) ◽  
pp. 245-252 ◽  
Author(s):  
H. Sone ◽  
T. Kaneko ◽  
N. Miyakawa
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Growth Kinetics ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
In Situ Measurements ◽  
Kinetics Of

In-situ Growth and Growth Kinetics of Epitaxial (100) CoSi2 Layer on (100) Si by Reactive Chemical Vapor Deposition

2000 ◽  
Vol 611 ◽  
Author(s):  
Hwa Sung Rhee ◽  
Heui Seung Lee ◽  
Jong Ho Park ◽  
Byung Tae Ahn
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Kinetics ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
In Situ Growth ◽  
Si Substrate ◽  
Flat Interface ◽  
Initial Deposition ◽  
Kinetics Of

ABSTRACTUniform epitaxial CoSi2 layers have been grown in situ on a (100) Si substrate at temperatures near 600 °C by reactive chemical-vapor deposition of cyclopentadienyl dicarbonyl cobalt, Co(η5-C5H5)(CO)2. The growth kinetics of an epitaxial CoSi2 layer on a Si (100) substrate was investigated at temperatures ranging from 575 to 650 °C. In initial deposition stage, platelike discrete CoSi2 spikes were nucleated along the <111> directions in (100) Si substrate with a twinned structure. The discrete CoSi2 plates with both {111} and (100) planes grew into an epitaxial layer with a flat interface on (100) Si. For epitaxial CoSi2 growth on (100) Si, the activation energy of the parabolic growth was found to be 2.80 eV. The growth rate seems to be controlled by the diffusion of Co through the CoSi2 layer.

Growth Kinetics of Silicon Carbide Chemical Vapor Deposition from Methyltrichlorosilane

1999 ◽  
Vol 38 (Part 1, No. 4A) ◽  
pp. 2089-2091 ◽  
Author(s):  
Tsutomu Kaneko ◽  
Hayato Sone ◽  
Nobuaki Miyakawa ◽  
Mitihiro Naka
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Growth Kinetics ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Kinetics Of

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

1995 ◽  
Vol 53 ◽  
pp. 256-257
Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Effect ◽  
Line Drawing ◽  
Chemical Vapor ◽  
Environmental Cell ◽  
Engineering Changes ◽  
Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

scholarly journals Study of deposition parameters and growth kinetics of ZnO deposited by aerosol assisted chemical vapor deposition

RSC Advances ◽  
2021 ◽  
Vol 11 (30) ◽  
pp. 18493-18499
Author(s):  
Sergio Sánchez-Martín ◽  
S. M. Olaizola ◽  
E. Castaño ◽  
E. Urionabarrenetxea ◽  
G. G. Mandayo ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Kinetics ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Kinetics Analysis ◽  
Deposition Parameters ◽  
Kinetics Of

Impact of deposition parameters, microstructure and growth kinetics analysis of ZnO grown by Aerosol-assisted Chemical Vapor Deposition (AACVD).

Experimental studies of growth kinetics of silicon by remote plasma-enhanced chemical vapor deposition at low temperatures

1990 ◽  
Author(s):  
Brian G. Anthony ◽  
Ting-Chen Hsu ◽  
Louis H. Breaux ◽  
Rong Z. Qian ◽  
Sanjay K. Banerjee ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Kinetics ◽  
Vapor Deposition ◽  
Low Temperatures ◽  
Experimental Studies ◽  
Chemical Vapor ◽  
Remote Plasma ◽  
Kinetics Of
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