Low-temperature-deposited AlGaN interlayer for improvement of AlGaN/GaN heterostructure

2001 ◽  
Vol 223 (1-2) ◽  
pp. 83-91 ◽  
Author(s):  
Satoshi Kamiyama ◽  
Motoaki Iwaya ◽  
Nobuaki Hayashi ◽  
Tetsuya Takeuchi ◽  
Hiroshi Amano ◽  
...  
2017 ◽  
Vol 62 (8) ◽  
pp. 1288-1291
Author(s):  
A. A. Andreev ◽  
E. A. Vavilova ◽  
I. S. Ezubchenko ◽  
M. L. Zanaveskin ◽  
I. O. Maiboroda

2007 ◽  
Vol 204 (10) ◽  
pp. 3349-3353 ◽  
Author(s):  
J. D. Wu ◽  
W. C. Chien ◽  
H. L. Kao ◽  
J.-I. Chyi ◽  
C.-H. Hsu

RSC Advances ◽  
2014 ◽  
Vol 4 (52) ◽  
pp. 27308-27314 ◽  
Author(s):  
Shibin Krishna TC ◽  
Govind Gupta

InN/GaN heterostructure based Schottky diodes are fabricated by low energetic nitrogen ions at 300 °C.


2019 ◽  
Vol 481 ◽  
pp. 379-384 ◽  
Author(s):  
Monu Mishra ◽  
Naman Kumar Bhalla ◽  
Ajit Dash ◽  
Govind Gupta

Author(s):  
David Maria Tobaldi ◽  
Valentina Triminì ◽  
Arianna Cretì ◽  
Mauro Lomascolo ◽  
Stefano Dicorato ◽  
...  

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