Influence of the low-temperature AlN interlayers on the electrical properties of AlGaN/GaN heterostructure on Si substrate

2016 ◽  
Author(s):  
Zhiyuan He ◽  
Shaoqing Liu ◽  
Jianyao Hu ◽  
Huawei Xu ◽  
Qingli Huang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Si Substrate ◽  
Gan Heterostructure

scholarly journals Growth of n-Ga doped ZnO nanowires interconnected with disks over p-Si substrate and their heterojunction diode application

2020 ◽  
Vol 10 (1) ◽  
pp. 21-28
Author(s):  
Yas Al-Hadeethi ◽  
Rashad I. Badran ◽  
Ahmad Umar ◽  
Saleh. H. Al-Heniti ◽  
Bahaaudin M. Raffah ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Morphological Characteristics ◽  
Zno Nanowires ◽  
Heterojunction Diode ◽  
Si Substrate ◽  
Voltage Range ◽  
Doped Zno ◽  
Electrical Characterizations ◽  
Excellent Stability

In this paper, the heterojunction diode based on n-Ga doped ZnO nanowires interconnected with disks/p-Si assembly was fabricated and their low-temperature electrical properties were examined. The Ga-doped ZnO nanowires interconnected with disks were grown over p-Si substrate and studied by numerous techniques to understand the structural, compositional and morphological characteristics. Electrical properties, at lowtemperatures ranging from 77 K–295 K, were examined for the fabricated heterojunction diode assembly both in reverse and forward biased conditions which exhibited an excellent stability over all the temperature range. The detailed electrical characterizations revealed that the current decreases gradually from 1.9 μA, to 0.87 μA to 0.84 μA when temperature increases from 77 K, 100 K to 150 K and then increases gradually from 1.86 μA–3.36 μA and to 9.95 μA when temperature increases from 200 K–250 K and to 295 K, respectively. Both the highest rectifying ratio at 100 K and the lowest one at 295 K occur in the voltage range of 2–5 V.

Influence of the carbon-doping location on the material and electrical properties of a AlGaN/GaN heterostructure on Si substrate

2015 ◽  
Vol 30 (10) ◽  
pp. 105037 ◽  
Author(s):  
Yiqiang Ni ◽  
Deqiu Zhou ◽  
Zijun Chen ◽  
Yue Zheng ◽  
Zhiyuan He ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Carbon Doping ◽  
Si Substrate ◽  
Gan Heterostructure

The formation of low temperature Cu3Si in Ag(Cu)/Si structure upon annealing and its effects on adhesion and resistivity

2003 ◽  
Vol 766 ◽  
Author(s):  
Sungjin Hong ◽  
Seob Lee ◽  
Yeonkyu Ko ◽  
Jaegab Lee
Keyword(s):  
Low Temperature ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Si Substrate ◽  
Copper Silicide ◽  
Alloy Films ◽  
Cu Alloy ◽  
Cu Film ◽  
Rapid Drop

AbstractThe annealing of Ag(40 at.% Cu) alloy films deposited on a Si substrate at 200 – 800 oC in vacuum has been conducted to investigate the formation of Cu3Si at the Ag-Si interface and its effects on adhesion and resistivity of Ag(Cu)/Si structure. Auger electron spectroscopy(AES) analysis showed that annealing at 200°C allowed a diffusion of Cu to the Si surface, leading to the significant reduction in Cu concentration in Ag(Cu) film and thus causing a rapid drop in resistivity. In addition, the segregated Cu to the Si surface reacts with Si, forming a continuous copper silicide at the Ag(Cu)/Si interface, which can contribute to an enhanced adhesion of Ag(Cu)/Si annealed at 200 oC. However, as the temperature increases above 300°C, the adhesion tends to decrease, which may be attributed to the agglomeration of copper silicide beginning at around 300°C.

scholarly journals Effect of Curing Agents on Electrical Properties of Low-Temperature Curing Conductive Coatings and Thermodynamic Analysis

Coatings ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 656
Author(s):  
Junjie Shu ◽  
Yang Wang ◽  
Bei Guo ◽  
Weihua Qin ◽  
Lanxuan Liu ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Surface Resistance ◽  
Advanced Manufacturing ◽  
Curing Time ◽  
Conductive Coatings ◽  
Exponential Factor ◽  
Design Expert ◽  
Surface Method ◽  
Curing Agents

Silver-based high-conductivity coatings are used in many advanced manufacturing equipment and components, and existing coatings require high-temperature curing. This paper studies the effects of different curing agents on the electrical properties of low-temperature curing (<100 °C) conductive coatings, and analyzes the effects of different curing temperatures and curing time on the surface resistance, square resistance and resistivity of conductive coatings. The response surface method in Design Expert was used to construct the model, and the curing thermodynamics of different curing agents were analyzed by DSC. It was found that curing agents with lower Tm and activation energy, higher pre-exponential factor and more flexible segments are beneficial to the preparation of highly conductive coatings.

EFFECT OF DISORDER ON THE ELECTRICAL PROPERTIES OF AMORPHOUS CONDUCTING CARBON FILMS: OBSERVANCE OF FIELD INDUCED METAL-INSULATOR TRANSITION?

2000 ◽  
Vol 14 (02n03) ◽  
pp. 224-229 ◽  
Author(s):  
V. MEENAKSHI ◽  
S. V. SUBRAMANYAM
Keyword(s):  
Magnetic Field ◽  
Electrical Properties ◽  
External Magnetic Field ◽  
Low Temperature ◽  
Carbon Films ◽  
Electronic Systems ◽  
Metal Insulator Transition ◽  
Preparation Temperature ◽  
Metal Insulator ◽  
Effect Of Disorder

In this work, the influence of disorder on the electrical properties (DC conductivity and Magnetoresistance) of amorphous conducting carbon films, prepared by the pyrolysis of Tetra chloro phthalic anhydride, is reported and discussed. The low temperature electrical properties are analyzed in terms of the various models developed for disordered electronic systems. The results indicate the possibility of a metal - insulator (M-I) transition, both as a function of preparation temperature and an external magnetic field.

A Novel Low Temperature Self-Aligned Ti Silicide Technology for Sub-0.18 μm Cmos Devices

1998 ◽  
Vol 525 ◽  
Author(s):  
L. P. Ren ◽  
P. Liu ◽  
G. Z. Pan ◽  
Jason C. S. Woo
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Amorphous Layer ◽  
Sharp Interface ◽  
Silicide Formation ◽  
Si Substrate ◽  
Metal Thickness ◽  
Substrate Doping

ABSTRACTA novel low temperature self-aligned Ti silicidation with Ge+ pre-amorphization implant (PAI) is presented. Compared to conventional high temperature PAM silicidation, the advantages of Ti salicidation at temperatures below the recrystallization of a pre-amorphized layer are: (1) C49 TiSi2 silicide formation occurs only in the pre-amorphized layer so that the silicide depth can be well controlled, forming a very sharp interface between the silicide and the Si substrate; (2) Ti just reacts with the amorphous layer, avoiding the so-called bridging issue in which the silicide grows laterally over the isolation or spacer; (3) the effects of metal thickness and substrate doping on silicide formation are suppressed.

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