HALL RESISTANCE ANOMALY AT LOW TEMPERATURE IN ALGAN/GAN HETEROSTRUCTURE

2003 ◽  
Author(s):  
K. TSUBAKI ◽  
N. MAEDA ◽  
T. SAITOH ◽  
N. KOBAYASHI
Keyword(s):  
Low Temperature ◽  
Hall Resistance ◽  
Gan Heterostructure ◽  
Resistance Anomaly

Influence of a low-temperature GaN cap layer on the electron concentration in AlGaN/GaN heterostructure

2017 ◽  
Vol 62 (8) ◽  
pp. 1288-1291
Author(s):  
A. A. Andreev ◽  
E. A. Vavilova ◽  
I. S. Ezubchenko ◽  
M. L. Zanaveskin ◽  
I. O. Maiboroda
Keyword(s):  
Low Temperature ◽  
Electron Concentration ◽  
Cap Layer ◽  
Gan Heterostructure

AlN/GaN heterostructure prepared using a low-temperature helicon sputtering system

2007 ◽  
Vol 204 (10) ◽  
pp. 3349-3353 ◽  
Author(s):  
J. D. Wu ◽  
W. C. Chien ◽  
H. L. Kao ◽  
J.-I. Chyi ◽  
C.-H. Hsu
Keyword(s):  
Low Temperature ◽  
Gan Heterostructure ◽  
Sputtering System

Band alignment and Schottky behaviour of InN/GaN heterostructure grown by low-temperature low-energy nitrogen ion bombardment

RSC Advances ◽  
2014 ◽  
Vol 4 (52) ◽  
pp. 27308-27314 ◽  
Author(s):  
Shibin Krishna TC ◽  
Govind Gupta
Keyword(s):  
Low Temperature ◽  
Schottky Diodes ◽  
Ion Bombardment ◽  
Band Alignment ◽  
Low Energy ◽  
Nitrogen Ions ◽  
Nitrogen Ion ◽  
Gan Heterostructure

InN/GaN heterostructure based Schottky diodes are fabricated by low energetic nitrogen ions at 300 °C.

Nanostructured GaN and AlGaN/GaN heterostructure for catalyst-free low-temperature CO sensing

2019 ◽  
Vol 481 ◽  
pp. 379-384 ◽  
Author(s):  
Monu Mishra ◽  
Naman Kumar Bhalla ◽  
Ajit Dash ◽  
Govind Gupta
Keyword(s):  
Low Temperature ◽  
Catalyst Free ◽  
Gan Heterostructure

scholarly journals Low-Temperature and Ammonia-Free Epitaxy of the GaN/AlGaN/GaN Heterostructure

2021 ◽  
Author(s):  
David Maria Tobaldi ◽  
Valentina Triminì ◽  
Arianna Cretì ◽  
Mauro Lomascolo ◽  
Stefano Dicorato ◽  
...  
Keyword(s):  
Low Temperature ◽  
Gan Heterostructure

The Co-Doping Effect of Si and Mn on the Dilute Ferromagnetic Semiconductor Thin Films

2011 ◽  
Vol 233-235 ◽  
pp. 2624-2628
Author(s):  
Gang Xiang ◽  
Xi Zhang
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Ferromagnetic Semiconductor ◽  
Doping Effect ◽  
Hall Resistance ◽  
Co Doping ◽  
Si Doping ◽  
Transport Studies ◽  
Semiconductor Thin Films ◽  
Curie Temperatures

The co-doping effect of Si and Mn have been studied in the low temperature grown ferromagnetic semiconductor (Ga,Mn)As thin films. It is found that Si doping decreases the Curie temperatures of the ferromagnetic sample due to carrier compensation and defects formation. The transport studies show that the Si incorporation increases the resistivity of the (Ga,Mn)As thin films, and increase the planar Hall resistance while increases the resistance transitions in the magnetic samples.

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