AlN/GaN heterostructure prepared using a low-temperature helicon sputtering system

Influence of a low-temperature GaN cap layer on the electron concentration in AlGaN/GaN heterostructure

Technical Physics ◽

10.1134/s1063784217080035 ◽

2017 ◽

Vol 62 (8) ◽

pp. 1288-1291

Author(s):

A. A. Andreev ◽

E. A. Vavilova ◽

I. S. Ezubchenko ◽

M. L. Zanaveskin ◽

I. O. Maiboroda

Keyword(s):

Low Temperature ◽

Electron Concentration ◽

Cap Layer ◽

Effects of plasma-induced defects on electrical characteristics of AlGaN/GaN heterostructure before and after low-temperature annealing

Thin Solid Films ◽

10.1016/j.tsf.2013.10.086 ◽

2014 ◽

Vol 557 ◽

pp. 212-215 ◽

Cited By ~ 4

Author(s):

Takuma Takimoto ◽

Koji Takeshita ◽

Seiji Nakamura ◽

Tsugunori Okumura

Keyword(s):

Low Temperature ◽

Electrical Characteristics ◽

Low Temperature Annealing ◽

Before And After ◽

Gan Heterostructure ◽

Induced Defects

Investigation of AlN thin film growth on MgO(111) substrates using low temperature helicon sputtering system

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2015.11.043 ◽

2016 ◽

Vol 436 ◽

pp. 46-50 ◽

Cited By ~ 5

Author(s):

Wei-Fan Hsu ◽

Hui-Ling Kao ◽

Zih-Ping Lin

Keyword(s):

Thin Film ◽

Low Temperature ◽

Film Growth ◽

Thin Film Growth ◽

Low temperature nanocrystalline silicon nitride film grown on silicon (1 1 1) by radio frequency sputtering system

Optik ◽

10.1016/j.ijleo.2015.01.019 ◽

2015 ◽

Vol 126 (6) ◽

pp. 596-598 ◽

Cited By ~ 2

Author(s):

Khuram Ali ◽

Sohail A. Khan ◽

M.Z. MatJafri

Keyword(s):

Silicon Nitride ◽

Low Temperature ◽

Radio Frequency ◽

Nanocrystalline Silicon ◽

Nitride Film ◽

Silicon Nitride Film ◽

Radio Frequency Sputtering ◽

High Rate and Low Temperature Deposition of Co-Cr Films by Exposed Pole Magnetron Co-Sputtering System

Japanese Journal of Applied Physics ◽

10.1143/jjap.24.l752 ◽

1985 ◽

Vol 24 (Part 2, No. 9) ◽

pp. L752-L754 ◽

Cited By ~ 9

Author(s):

Takakazu Takahashi ◽

Tsutomu Miyata ◽

Junsaku Yoshida ◽

Tomonobu Hata

Keyword(s):

Low Temperature ◽

High Rate ◽

Low Temperature Deposition ◽

Temperature Deposition ◽

Band alignment and Schottky behaviour of InN/GaN heterostructure grown by low-temperature low-energy nitrogen ion bombardment

RSC Advances ◽

10.1039/c4ra02533d ◽

2014 ◽

Vol 4 (52) ◽

pp. 27308-27314 ◽

Cited By ~ 7

Author(s):

Shibin Krishna TC ◽

Govind Gupta

Keyword(s):

Low Temperature ◽

Schottky Diodes ◽

Ion Bombardment ◽

Band Alignment ◽

Low Energy ◽

Nitrogen Ions ◽

Nitrogen Ion ◽

InN/GaN heterostructure based Schottky diodes are fabricated by low energetic nitrogen ions at 300 °C.

HALL RESISTANCE ANOMALY AT LOW TEMPERATURE IN ALGAN/GAN HETEROSTRUCTURE

Toward the Controllable Quantum States ◽

10.1142/9789812705556_0019 ◽

2003 ◽

Author(s):

K. TSUBAKI ◽

N. MAEDA ◽

T. SAITOH ◽

N. KOBAYASHI

Keyword(s):

Low Temperature ◽

Hall Resistance ◽

Gan Heterostructure ◽

Resistance Anomaly

Nanostructured GaN and AlGaN/GaN heterostructure for catalyst-free low-temperature CO sensing

Applied Surface Science ◽

10.1016/j.apsusc.2019.03.125 ◽

2019 ◽

Vol 481 ◽

pp. 379-384 ◽

Cited By ~ 4

Author(s):

Monu Mishra ◽

Naman Kumar Bhalla ◽

Ajit Dash ◽

Govind Gupta

Keyword(s):

Low Temperature ◽

Catalyst Free ◽

Low-Temperature and Ammonia-Free Epitaxy of the GaN/AlGaN/GaN Heterostructure

ACS Applied Electronic Materials ◽

10.1021/acsaelm.1c00894 ◽

2021 ◽

Author(s):

David Maria Tobaldi ◽

Valentina Triminì ◽

Arianna Cretì ◽

Mauro Lomascolo ◽

Stefano Dicorato ◽

...

Keyword(s):

Low Temperature ◽

Low-Temperature Naturatron Sputtering System for Deposition of Indium Tin Oxide Film

IEEE Transactions on Plasma Science ◽

10.1109/tps.2014.2356332 ◽

2014 ◽

Vol 42 (10) ◽

pp. 3391-3396 ◽

Cited By ~ 1

Author(s):

Nuttee Thungsuk ◽

Toshifumi Yuji ◽

Nat Kasayapanand ◽

Narong Mungkung ◽

Peerapong Nuachauy ◽

...

Keyword(s):

Low Temperature ◽

Oxide Film ◽

Tin Oxide ◽

Indium Tin Oxide ◽