Influence of a low-temperature GaN cap layer on the electron concentration in AlGaN/GaN heterostructure

2017 ◽  
Vol 62 (8) ◽  
pp. 1288-1291
Author(s):  
A. A. Andreev ◽  
E. A. Vavilova ◽  
I. S. Ezubchenko ◽  
M. L. Zanaveskin ◽  
I. O. Maiboroda
Keyword(s):  
Low Temperature ◽  
Electron Concentration ◽  
Cap Layer ◽  
Gan Heterostructure

GaN Schottky barrier photodetectors with a low-temperature GaN cap layer

2003 ◽  
Vol 82 (17) ◽  
pp. 2913-2915 ◽  
Author(s):  
M. L. Lee ◽  
J. K. Sheu ◽  
W. C. Lai ◽  
S. J. Chang ◽  
Y. K. Su ◽  
...  
Keyword(s):  
Low Temperature ◽  
Schottky Barrier ◽  
Cap Layer

AlN/GaN heterostructure prepared using a low-temperature helicon sputtering system

2007 ◽  
Vol 204 (10) ◽  
pp. 3349-3353 ◽  
Author(s):  
J. D. Wu ◽  
W. C. Chien ◽  
H. L. Kao ◽  
J.-I. Chyi ◽  
C.-H. Hsu
Keyword(s):  
Low Temperature ◽  
Gan Heterostructure ◽  
Sputtering System

GaN Ultraviolet Photodetector with a Low-Temperature AlN Cap Layer

2007 ◽  
Vol 10 (6) ◽  
pp. H196 ◽  
Author(s):  
S. J. Chang ◽  
C. L. Yu ◽  
P. C. Chang ◽  
Y. C. Lin
Keyword(s):  
Low Temperature ◽  
Ultraviolet Photodetector ◽  
Cap Layer

GaN Schottky barrier photodiode on Si (111) with low-temperature-grown cap layer

2009 ◽  
Vol 481 (1-2) ◽  
pp. L15-L19 ◽  
Author(s):  
L.S. Chuah ◽  
Z. Hassan ◽  
H. Abu Hassan ◽  
N.M. Ahmed
Keyword(s):  
Low Temperature ◽  
Schottky Barrier ◽  
Cap Layer
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