Effects of growth temperature on the properties of ZnO/GaAs prepared by metalorganic chemical vapor deposition

2003 ◽  
Vol 250 (3-4) ◽  
pp. 437-443 ◽  
Author(s):  
Kyu-Hyun Bang ◽  
Deuk-Kyu Hwang ◽  
Sang-Wook Lim ◽  
Jae-Min Myoung
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Temperature ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Metalorganic Chemical

MOCVD Growth Of GaxIn1−xAs1−ySby and GaxIn1−xSb ALLOYS: Effect of Growth Parameters on Their Solid Compositions

1995 ◽  
Vol 415 ◽  
Author(s):  
Baolin Zhang ◽  
Tianming Zhou ◽  
Hong Jiang ◽  
Yongqiang Ning ◽  
Shuwei Li ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Temperature ◽  
Vapor Deposition ◽  
Growth Kinetic ◽  
Metalorganic Chemical Vapor Deposition ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Mocvd Growth ◽  
Growth Temperature Dependence ◽  
Metalorganic Chemical

ABSTRACTQuaternary GaxIn1−xAs1−ySby and ternary GaxIn1−xSb alloys have been grown by metalorganic chemical vapor deposition (MOCVD). The effects of growth parameters on the solid compositions, x, y for GaxIn1−xAs1−ySby and x for GaxIn1−x Sb alloys are described in detail. Concentrations of the reactants have major effects on the corresponding solid compositions in the two kinds of alloys. The growth temperature dependence of the solid compositions in both GaxIn1−xAs1−ySby and GaxIn1−xSb was obviously observed and the growth kinetic factor was considered to account for this dependence. It was found that III/V ratio in vapor has a great effect on x in GaxIn1−xSb alloy but little effect on x and y in GaxIn1−xAs1−ySby alloy.

The effect of growth temperature on the coaxial InxGa1−xN/GaN nanowires grown by metalorganic chemical vapor deposition

2012 ◽  
Vol 520 (23) ◽  
pp. 6975-6979
Author(s):  
Ji-Hyeon Park ◽  
R. Navamathavan ◽  
Yong-Ho Ra ◽  
Bo-Ra Yeom ◽  
Jae-Kwan Sim ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Temperature ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Gan Nanowires ◽  
Metalorganic Chemical

ZnO Nanowalls and Nanocolumns Grown by Metalorganic Chemical Vapor Deposition

2007 ◽  
Vol 124-126 ◽  
pp. 77-80
Author(s):  
Sang Woo Kim ◽  
Shizuo Fujita ◽  
Min Su Yi ◽  
Han Ki Kim ◽  
Bee Lyong Yang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Temperature ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Free Exciton ◽  
Chemical Vapor ◽  
Hexagonal Structure ◽  
Preferred Orientation ◽  
Si Substrates ◽  
Metalorganic Chemical

ZnO nanowalls and nanocolumns were synthesized on Si3N4 (50 nm)/Si (001) substrates at low growth temperature (350 and 400 oC) by metalorganic chemical vapor deposition (MOCVD) with no metal catalysts. ZnO nanowalls with extremely small wall thicknesses below 10 nm and nanocolumns with diameters over 100 nm were formed on the Si3N4/Si substrates relying on MOCVD-growth temperature. It was found that ZnO nanowalls have a strong c-axis preferred orientation with a hexagonal structure, while ZnO nanocolumns have a weak c-axis preferred orientation with broken stacking orders in synchrotron x-ray scattering experiments. In addition, strong free-exciton emission from the ZnO nanowalls was clearly observed in photoluminescence measurements. On the other hand, we could not observe any emission bands from the ZnO nanocolumn samples.

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