Mobility enhancement and yellow luminescence in Si-doped GaN grown by metalorganic chemical vapor deposition technique

1997 ◽  
Vol 182 (3-4) ◽  
pp. 314-320 ◽  
Author(s):  
In-Hwan Lee ◽  
In-Hoon Choi ◽  
Cheul-Ro Lee ◽  
Sung-Jin Son ◽  
Jae-Young Leem ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Yellow Luminescence ◽  
Deposition Technique ◽  
Chemical Vapor Deposition Technique ◽  
Vapor Deposition Technique ◽  
Si Doped ◽  
Metalorganic Chemical

Preparation of Bi‐Sr‐Ca‐Cu‐0 Superconducting Thin Films by Mocvd

1989 ◽  
Vol 169 ◽  
Author(s):  
Shinji Gohda ◽  
Yasuhiro Maeda
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Superconducting Thin Films ◽  
Deposition Technique ◽  
Vapor Deposition Technique ◽  
Zero Resistance ◽  
Metalorganic Chemical

AbstractBi‐Sr‐Ca‐Cu‐0 superconducting thin films have been prepared on MgO substrates by a Metalorganic Chemical Vapor Deposition technique using an infrared lamp. It was found in this study that the film composition ratio could be precisely controlled by using this technique. A zero resistance at 81K was obtained for Bi1Sr1.3Ca0.9Cu1.8Ox film grown at 850°C. The critical current density of this film was 1.0xl03A/cm2 at 77K.

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