Fabrication of aluminum oxide thin films by a low‐pressure metalorganic chemical vapor deposition technique

1993 ◽  
Vol 62 (7) ◽  
pp. 681-683 ◽  
Author(s):  
J. S. Kim ◽  
H. A. Marzouk ◽  
P. J. Reucroft ◽  
J. D. Robertson ◽  
C. E. Hamrin
1989 ◽  
Vol 169 ◽  
Author(s):  
Shinji Gohda ◽  
Yasuhiro Maeda

AbstractBi‐Sr‐Ca‐Cu‐0 superconducting thin films have been prepared on MgO substrates by a Metalorganic Chemical Vapor Deposition technique using an infrared lamp. It was found in this study that the film composition ratio could be precisely controlled by using this technique. A zero resistance at 81K was obtained for Bi1Sr1.3Ca0.9Cu1.8Ox film grown at 850°C. The critical current density of this film was 1.0xl03A/cm2 at 77K.


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