Study of defects in GaN grown by the two-flow metalorganic chemical vapor deposition technique using monoenergetic positron beams

2001 ◽  
Vol 90 (1) ◽  
pp. 181-186 ◽  
Author(s):  
A. Uedono ◽  
S. F. Chichibu ◽  
Z. Q. Chen ◽  
M. Sumiya ◽  
R. Suzuki ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Technique ◽  
Chemical Vapor Deposition Technique ◽  
Vapor Deposition Technique ◽  
Positron Beams ◽  
Metalorganic Chemical

Photoreflectance Studies of Ga0.5In0.5P/GaAs Heterostructures Grown by Metalorganic Chemical Vapor Deposition Technique

1992 ◽  
Vol 31 (Part 2, No. 5A) ◽  
pp. L571-L573 ◽  
Author(s):  
Jenn-Shyong Hwang ◽  
Zhijiang Hang ◽  
Shin-Long Tyan ◽  
Sheng-Wei Ding ◽  
Jen-Hsiung Tung ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Technique ◽  
Chemical Vapor Deposition Technique ◽  
Vapor Deposition Technique ◽  
Metalorganic Chemical

Preparation of Bi‐Sr‐Ca‐Cu‐0 Superconducting Thin Films by Mocvd

1989 ◽  
Vol 169 ◽  
Author(s):  
Shinji Gohda ◽  
Yasuhiro Maeda
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Superconducting Thin Films ◽  
Deposition Technique ◽  
Vapor Deposition Technique ◽  
Zero Resistance ◽  
Metalorganic Chemical

AbstractBi‐Sr‐Ca‐Cu‐0 superconducting thin films have been prepared on MgO substrates by a Metalorganic Chemical Vapor Deposition technique using an infrared lamp. It was found in this study that the film composition ratio could be precisely controlled by using this technique. A zero resistance at 81K was obtained for Bi1Sr1.3Ca0.9Cu1.8Ox film grown at 850°C. The critical current density of this film was 1.0xl03A/cm2 at 77K.

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