Properties of titanium nitride thin films deposited by rapid‐thermal‐low‐pressure‐metalorganic‐chemical‐vapor‐deposition technique using tetrakis (dimethylamido) titanium precursor

1991 ◽  
Vol 70 (7) ◽  
pp. 3666-3677 ◽  
Author(s):  
A. Katz ◽  
A. Feingold ◽  
S. J. Pearton ◽  
S. Nakahara ◽  
M. Ellington ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Titanium Nitride ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Technique ◽  
Chemical Vapor Deposition Technique ◽  
Vapor Deposition Technique ◽  
Metalorganic Chemical

Preparation of Bi‐Sr‐Ca‐Cu‐0 Superconducting Thin Films by Mocvd

1989 ◽  
Vol 169 ◽  
Author(s):  
Shinji Gohda ◽  
Yasuhiro Maeda
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Superconducting Thin Films ◽  
Deposition Technique ◽  
Vapor Deposition Technique ◽  
Zero Resistance ◽  
Metalorganic Chemical

AbstractBi‐Sr‐Ca‐Cu‐0 superconducting thin films have been prepared on MgO substrates by a Metalorganic Chemical Vapor Deposition technique using an infrared lamp. It was found in this study that the film composition ratio could be precisely controlled by using this technique. A zero resistance at 81K was obtained for Bi1Sr1.3Ca0.9Cu1.8Ox film grown at 850°C. The critical current density of this film was 1.0xl03A/cm2 at 77K.

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