Disorder-induced exciton localization in 2D wide-gap semiconductor solid solutions

2002 ◽  
Vol 100 (1-4) ◽  
pp. 243-257 ◽  
Author(s):  
S Permogorov ◽  
A Klochikhin ◽  
A Reznitsky
Keyword(s):  
Solid Solutions ◽  
Exciton Localization ◽  
Wide Gap

Exciton localization in bulk and two-dimensional wide-gap II–VI solid solutions

2004 ◽  
Vol 371 (1-2) ◽  
pp. 48-52 ◽  
Author(s):  
S Permogorov ◽  
A Klochikhin ◽  
A Reznitsky
Keyword(s):  
Solid Solutions ◽  
Two Dimensional ◽  
Exciton Localization ◽  
Wide Gap

EXCITON LOCALIZATION BY COMPOSITIONAL FLUCTUATIONS IN II-VI SEMICONDUCTOR SOLID SOLUTIONS

1985 ◽  
Vol 46 (C7) ◽  
pp. C7-173-C7-177 ◽  
Author(s):  
S. Permogorov ◽  
A. Reznitsky ◽  
S. Verbin ◽  
A. Naumov ◽  
W. von der Osten ◽  
...  
Keyword(s):  
Solid Solutions ◽  
Exciton Localization

Photoluminescence and structural properties of selected wide-gap II-VI solid solutions

1999 ◽  
Author(s):  
Franciszek Firszt ◽  
Stanislaw Legowski ◽  
Hanna Meczynska ◽  
Barbara Sekulska ◽  
Jacek Szatkowski ◽  
...  
Keyword(s):  
Structural Properties ◽  
Solid Solutions ◽  
Wide Gap

Stimulated Emission from Wide-Gap Semiconductors

2011 ◽  
Vol 222 ◽  
pp. 110-113
Author(s):  
Edmundas Kuokstis
Keyword(s):  
Optical Gain ◽  
Stimulated Emission ◽  
Electron Hole ◽  
Hole Plasma ◽  
Exciton Localization ◽  
Interaction Processes ◽  
Electron Hole Plasma ◽  
Wide Gap

Stimulated emission and optical gain problems are reviewed on the basis of analysis of highly photoexcited III-Nitride and ZnO wide-gap materials. Spontaneous and stimulated emission along with optical gain of these materials in UV region is analyzed. The possible mechanisms of inverted population in In-containing materials and ZnO semiconductors are discussed involving mechanisms of dense electron-hole plasma, carrier (exciton) localization, as well as various interaction processes in dense exciton gas.

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