Disorder-induced exciton localization in 2D wide-gap semiconductor solid solutions

2002 ◽  
Vol 100 (1-4) ◽  
pp. 243-257 ◽  
Author(s):  
S Permogorov ◽  
A Klochikhin ◽  
A Reznitsky
2004 ◽  
Vol 371 (1-2) ◽  
pp. 48-52 ◽  
Author(s):  
S Permogorov ◽  
A Klochikhin ◽  
A Reznitsky

1985 ◽  
Vol 46 (C7) ◽  
pp. C7-173-C7-177 ◽  
Author(s):  
S. Permogorov ◽  
A. Reznitsky ◽  
S. Verbin ◽  
A. Naumov ◽  
W. von der Osten ◽  
...  

1999 ◽  
Author(s):  
Franciszek Firszt ◽  
Stanislaw Legowski ◽  
Hanna Meczynska ◽  
Barbara Sekulska ◽  
Jacek Szatkowski ◽  
...  

2011 ◽  
Vol 222 ◽  
pp. 110-113
Author(s):  
Edmundas Kuokstis

Stimulated emission and optical gain problems are reviewed on the basis of analysis of highly photoexcited III-Nitride and ZnO wide-gap materials. Spontaneous and stimulated emission along with optical gain of these materials in UV region is analyzed. The possible mechanisms of inverted population in In-containing materials and ZnO semiconductors are discussed involving mechanisms of dense electron-hole plasma, carrier (exciton) localization, as well as various interaction processes in dense exciton gas.


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