Structural study of initial layer for μc-Si:H growth using real time in situ spectroscopic ellipsometry and infrared spectroscopy

2000 ◽  
Vol 266-269 ◽  
pp. 38-42 ◽  
Author(s):  
H Fujiwara ◽  
Y Toyoshima ◽  
M Kondo ◽  
A Matsuda
2000 ◽  
Vol 619 ◽  
Author(s):  
Y. Gao ◽  
A.H. Mueller ◽  
E.A. Irene ◽  
O. Auciello ◽  
A.R. Krauss ◽  
...  

ABSTRACTAn in situ study of barrier layers using spectroscopic ellipsometry (SE) and Time-of-Flight (ToF) mass spectroscopy of recoiled ions (MSRI) is presented. First the formation of copper silicides has been observed by real-time SE and in situ MSRI in annealed Cu/Si samples. Second TaSiN films as barrier layers for copper interconnects were investigated. Failure of the TaSiN layers in Cu/TaSiN/Si samples was detected by real-time SE during annealing and confirmed by in situ MSRI. The effect of nitrogen concentration on TaSiN film performance as a barrier was also examined. The stability of both TiN and TaSiN films as barriers for electrodes for dynamic random access memory (DRAM) devices has been studied. It is shown that a combination of in situ SE and MSRI can be used to monitor the evolution of barrier layers and detect the failure of barriers in real-time.


2020 ◽  
Vol 5 (9) ◽  
pp. 1642-1646
Author(s):  
Elyse N. T. DiMaso ◽  
Robert W. Bondi ◽  
John Guo ◽  
Alexander G. O'Brien

In-line Fourier transform mid-infrared spectroscopy (FTIR) in combination with a moving window t-test method was used to determine the endpoint of a reaction with a highly inconsistent rate.


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