Solid-state dewetting of thin Au films studied with real-time, in situ spectroscopic ellipsometry

2017 ◽  
Vol 421 ◽  
pp. 651-655 ◽  
Author(s):  
M. Magnozzi ◽  
F. Bisio ◽  
M. Canepa
Keyword(s):  
Solid State ◽  
Real Time ◽  
Spectroscopic Ellipsometry

scholarly journals Characterization and Quantification of Depletion and Accumulation Layers in Solid‐State Li + ‐Conducting Electrolytes Using In Situ Spectroscopic Ellipsometry

2021 ◽  
pp. 2100585
Author(s):  
Leon Katzenmeier ◽  
Leif Carstensen ◽  
Simon J. Schaper ◽  
Peter Müller‐Buschbaum ◽  
Aliaksandr S. Bandarenka
Keyword(s):  
Solid State ◽  
Spectroscopic Ellipsometry

In Situ Study of Barrier Layers Using Spectroscopic Ellipsometry and Mass Spectroscopy of Recoiled Ions

2000 ◽  
Vol 619 ◽  
Author(s):  
Y. Gao ◽  
A.H. Mueller ◽  
E.A. Irene ◽  
O. Auciello ◽  
A.R. Krauss ◽  
...  
Keyword(s):  
Real Time ◽  
Mass Spectroscopy ◽  
Spectroscopic Ellipsometry ◽  
Nitrogen Concentration ◽  
Random Access ◽  
Copper Interconnects ◽  
Access Memory ◽  
Barrier Layers ◽  
The Stability

ABSTRACTAn in situ study of barrier layers using spectroscopic ellipsometry (SE) and Time-of-Flight (ToF) mass spectroscopy of recoiled ions (MSRI) is presented. First the formation of copper silicides has been observed by real-time SE and in situ MSRI in annealed Cu/Si samples. Second TaSiN films as barrier layers for copper interconnects were investigated. Failure of the TaSiN layers in Cu/TaSiN/Si samples was detected by real-time SE during annealing and confirmed by in situ MSRI. The effect of nitrogen concentration on TaSiN film performance as a barrier was also examined. The stability of both TiN and TaSiN films as barriers for electrodes for dynamic random access memory (DRAM) devices has been studied. It is shown that a combination of in situ SE and MSRI can be used to monitor the evolution of barrier layers and detect the failure of barriers in real-time.

Sign in / Sign up

Export Citation Format

Share Document