Vacuum ultraviolet optical absorption band of non-bridging oxygen hole centers in SiO2 glass

2002 ◽  
Vol 122 (3-4) ◽  
pp. 117-120 ◽  
Author(s):  
Hideo Hosono ◽  
Koichi Kajihara ◽  
Takenobu Suzuki ◽  
Yoshiaki Ikuta ◽  
Linards Skuja ◽  
...  
Keyword(s):  
Absorption Band ◽  
Optical Absorption ◽  
Vacuum Ultraviolet ◽  
Sio2 Glass ◽  
Optical Absorption Band ◽  
Oxygen Hole ◽  
Hole Centers

scholarly journals Control of Optical Absorption Band due to Cu/Ag Nanoparticles in SiO2 Glass by Dual Ion Implantation of Cu- and Ag-.

Shinku ◽  
2002 ◽  
Vol 45 (6) ◽  
pp. 528-532
Author(s):  
Hiroshi TSUJI ◽  
Ken'ichi KURITA ◽  
Masanori MOTONO ◽  
Hiromitsu SUGAHARA ◽  
Yasuhito GOTOH ◽  
...  
Keyword(s):  
Absorption Band ◽  
Optical Absorption ◽  
Ion Implantation ◽  
Ag Nanoparticles ◽  
Sio2 Glass ◽  
Optical Absorption Band

scholarly journals Photocatalytic NO removal over calcium-bridged siloxenes under ultraviolet and visible light irradiation

2018 ◽  
Vol 47 (20) ◽  
pp. 7070-7076 ◽  
Author(s):  
Haruo Imagawa ◽  
Xiaoyong Wu ◽  
Hiroshi Itahara ◽  
Shu Yin ◽  
Kazunobu Kojima ◽  
...  
Keyword(s):  
Photocatalytic Activity ◽  
Absorption Band ◽  
Optical Absorption ◽  
Visible Light ◽  
Visible Light Irradiation ◽  
Light Irradiation ◽  
Ultraviolet Region ◽  
No Removal ◽  
Optical Absorption Band

Ca-Bridged siloxenes with a wide optical absorption band from the visible to ultraviolet region exhibited photocatalytic activity for NO removal.

Optical absorption band edge of single crystal β-GeSe2

1985 ◽  
Vol 110 (7-8) ◽  
pp. 426-428 ◽  
Author(s):  
Zoran V. Popović ◽  
A. Breitschwerdt
Keyword(s):  
Absorption Band ◽  
Optical Absorption ◽  
Single Crystal ◽  
Band Edge ◽  
Absorption Band Edge ◽  
Optical Absorption Band

Properties of Nano-layers of Nanoclusters of Ag in SiO2 Host produced by MeV Si ion bombardment

2007 ◽  
Vol 1020 ◽  
Author(s):  
C.C. Smith ◽  
S. Budak ◽  
S. Guner ◽  
C. Muntele ◽  
R. A. Minamisawa ◽  
...  
Keyword(s):  
Thermal Properties ◽  
Absorption Band ◽  
Optical Absorption ◽  
Buffer Layer ◽  
Periodic Structure ◽  
Rutherford Backscattering Spectrometry ◽  
Bulk Material ◽  
Ion Bombardment ◽  
Optical Absorption Band ◽  
Before And After

AbstractWe prepared 50 periodic nano-layers of SiO2/AgxSiO2(1-x). The deposited multi-layer films have a periodic structure consisting of alternating layers where each layer is between 1-10 nm thick. The purpose of this research is to generate nanolayers of nanocrystals of Ag with SiO2 as host and as buffer layer using a combination of co-deposition and MeV ion bombardment taking advantage of the electronics energy deposited in the MeV ion track due to ionization in order to nucleate nanoclusters. Our previous work showed that these nanoclusters have crystallinity similar to the bulk material. Nanocrystals of Ag in silica produce an optical absorption band at about 420 nm. Due to the interaction of nanocrystals between sequential nanolayers there is widening of the absorption band. The electrical and thermal properties of the layered structures were studied before and after 5 MeV Si ions bombardment at various fluences to form nanocrystals in layers of SiO2 containing few percent of Ag. Rutherford Backscattering Spectrometry (RBS) was used to monitor the stoichiometry before and after MeV bombardments.

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