Palladium thin film deposition on polyimide by CW Ar+ laser radiation for electroless copper plating

2001 ◽  
Vol 384 (2) ◽  
pp. 185-188 ◽  
Author(s):  
K. Kordás ◽  
S. Leppävuori ◽  
A. Uusimäki ◽  
Thomas F. George ◽  
L. Nánai ◽  
...  
ChemInform ◽  
2010 ◽  
Vol 25 (35) ◽  
pp. no-no
Author(s):  
H. YOSHIKI ◽  
V. ALEXANDRUK ◽  
K. HASHIMOTO ◽  
A. FUJISHIMA

1996 ◽  
Vol 445 ◽  
Author(s):  
T. Itabashi ◽  
H. Akahoshi ◽  
A. Takahashi ◽  
M. Suzuki ◽  
M. Maeda

AbstractA thin film laminated high density multilayer wiring board was developed using electroless copper plating technology. The basic steps in the fabrication process are: laminating the high heat resistant polymer film, forming via holes by plasma etching and filling them by electroless copper metallization. The 25 μm diameter via holes can be completely filled with copper using the selective electroless plating method. This paper describes the fabrication process, focusing particularly on electroless copper plating.


2015 ◽  
Vol 18 (7) ◽  
pp. 479-485
Author(s):  
Sayuri Teshima ◽  
Kouichiro Murahashi ◽  
Kuniaki Otsuka ◽  
Koji Mitamura ◽  
Seiji Watase ◽  
...  

Copper electroless plating using polyhydroxylic alcohol was studied electrochemically using Dimethylamineborane(DMAB) as reducing agent. Copper methanesulphonate bath was used with Glycerol as the complexing agent and Potassium hydroxide as pH adjuster. The electroless bath was optimized by addition of 1 ppm concentration of stabilizers at 11.50 ± 0.25 pH. Tolytriazole(TTA) and Cytosine(CYS) are used as stabilizers and their effects on plating bath were studied and reported. Surface morphologies of the electroless copper coated epoxy substrates were investigated using Scanning Electron Microscope (SEM) and surface roughness by Atomic Force Microscopic (AFM) analysis. Crystallite size and specific surface area of copper thin film were observed by X-ray diffraction (XRD). Electrochemical characteristics were studied by Cyclic Voltammetry (CV). The physical parameters of the deposition shows that TTA influenced the copper coating while the CYS does not show much effect.


1994 ◽  
Vol 141 (5) ◽  
pp. L56-L58 ◽  
Author(s):  
Hajime Yoshiki ◽  
Valery Alexandruk ◽  
Kazuhito Hashimoto ◽  
Akira Fujishima

Author(s):  
M. Grant Norton ◽  
C. Barry Carter

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.


Author(s):  
E. L. Hall ◽  
A. Mogro-Campero ◽  
L. G. Turner ◽  
N. Lewis

There is great interest in the growth of thin superconducting films of YBa2Cu3Ox on silicon, since this is a necessary first step in the use of this superconductor in a variety of possible electronic applications including interconnects and hybrid semiconductor/superconductor devices. However, initial experiments in this area showed that drastic interdiffusion of Si into the superconductor occurred during annealing if the Y-Ba-Cu-O was deposited direcdy on Si or SiO2, and this interdiffusion destroyed the superconducting properties. This paper describes the results of the use of a zirconia buffer layer as a diffusion barrier in the growth of thin YBa2Cu3Ox films on Si. A more complete description of the growth and characterization of these films will be published elsewhere.Thin film deposition was carried out by sequential electron beam evaporation in vacuum onto clean or oxidized single crystal Si wafers. The first layer evaporated was 0.4 μm of zirconia.


2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-553-Pr3-560 ◽  
Author(s):  
W. Zhuang ◽  
L. J. Charneski ◽  
D. R. Evans ◽  
S. T. Hsu ◽  
Z. Tang ◽  
...  

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