scholarly journals Electroless Copper Nano Thin Film Deposition Using Ecofriendly Natural Polyhydroxylic Compound

2018 ◽  
Vol 2 (1) ◽  
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Complexing Agent ◽  
Physical Parameters ◽  
Electrochemical Characteristics ◽  
Plating Bath ◽  
Atomic Force ◽  
Electroless Copper ◽  
Surface Morphologies

Copper electroless plating using polyhydroxylic alcohol was studied electrochemically using Dimethylamineborane(DMAB) as reducing agent. Copper methanesulphonate bath was used with Glycerol as the complexing agent and Potassium hydroxide as pH adjuster. The electroless bath was optimized by addition of 1 ppm concentration of stabilizers at 11.50 ± 0.25 pH. Tolytriazole(TTA) and Cytosine(CYS) are used as stabilizers and their effects on plating bath were studied and reported. Surface morphologies of the electroless copper coated epoxy substrates were investigated using Scanning Electron Microscope (SEM) and surface roughness by Atomic Force Microscopic (AFM) analysis. Crystallite size and specific surface area of copper thin film were observed by X-ray diffraction (XRD). Electrochemical characteristics were studied by Cyclic Voltammetry (CV). The physical parameters of the deposition shows that TTA influenced the copper coating while the CYS does not show much effect.

Thin film deposition by magnetron sputtering and determination of some physical parameters

1989 ◽  
Vol 176 (2) ◽  
pp. 219-226 ◽  
Author(s):  
M.M.D. Ramos ◽  
J.B. Almeida ◽  
M.I.C. Ferreira ◽  
M.P. Dos Santos
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Physical Parameters

scholarly journals 2D and 3D Analyses of Metal Oxide Thin Films Examined by Atomic Force Microscope

2015 ◽  
Vol 773-774 ◽  
pp. 716-719
Author(s):  
Mokhter Faezahana ◽  
Nayan Nafarizal ◽  
Jia Wei Low ◽  
Che Ani Norhidayah ◽  
Mohd Zainizan Sahdan ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Metal Oxide ◽  
Three Dimensional ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Oxide Thin Films ◽  
Metal Oxide Thin Films ◽  
Atomic Force ◽  
Measured Sample

Atomic force microscope (AFM) is a useful tool to capture the two- and three-dimensional image of height and size of nanostructured thin film. It operate by measuring the forces between a sharp tip and surface of the measured sample. In addition, AFM is equipped with powerful software for image processing to interpret experimental results in detail. For example, by using the height and scanning length parameters of measured sample, average roughness and root mean square roughness can be evaluated. In the present works, the effect of image flattening process toward the surface roughness and surface fluctuations of metal oxide thin films will be presented. Set of samples were prepared by magnetron sputtering deposition and sol-gel coating techniques. In gas sensor industries using metal oxide thin film, surface roughness of metal oxide thin films are very important in order to improve the sensitivity and respond time of gas sensor. Therefore, optimization of thin film deposition and characterization are very important. The correlation between the three-dimensional image and thin film deposition and image processing parameters will also be presented.

scholarly journals Copper Hexacyanoferrate Thin Film Deposition and Its Application to a New Method for Diffusion Coefficient Measurement

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1860
Author(s):  
Jeonghun Yun ◽  
Yeongae Kim ◽  
Caitian Gao ◽  
Moobum Kim ◽  
Jae Yoon Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Electrochemical Characteristics ◽  
Deposition Method ◽  
Copper Hexacyanoferrate ◽  
Spontaneous Deposition ◽  
Copper Thin Film ◽  
Coefficient Measurement ◽  
Lift Off

The use of Prussian blue analogues (PBA) materials in electrochemical energy storage and harvesting has gained much interest, necessitating the further clarification of their electrochemical characteristics. However, there is no well-defined technique for manufacturing PBA-based microelectrochemical devices because the PBA film deposition method has not been well studied. In this study, we developed the following deposition method for growing copper hexacyanoferrate (CuHCFe) thin film: copper thin film is immersed into a potassium hexacyanoferrate solution, following which the redox reaction induces the spontaneous deposition of CuHCFe thin film on the copper thin film. The film grown via this method showed compatibility with conventional photolithography processes, and the micropattern of the CuHCFe thin film was successfully defined by a lift-off process. A microelectrochemical device based on the CuHCFe thin film was fabricated via micropatterning, and the sodium ion diffusivity in CuHCFe was measured. The presented thin film deposition method can deposit PBAs on any surface, including insulating substrates, and it can extend the utilization of PBA thin films to various applications.

Palladium thin film deposition on polyimide by CW Ar+ laser radiation for electroless copper plating

2001 ◽  
Vol 384 (2) ◽  
pp. 185-188 ◽  
Author(s):  
K. Kordás ◽  
S. Leppävuori ◽  
A. Uusimäki ◽  
Thomas F. George ◽  
L. Nánai ◽  
...  
Keyword(s):  
Thin Film ◽  
Laser Radiation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Copper Plating ◽  
Electroless Copper Plating ◽  
Electroless Copper

A Process Model for Thin Film Deposition by Sputtering: Study for Bottom Coverage of Sub-Micron Contact Holes

1995 ◽  
Vol 389 ◽  
Author(s):  
C. C. Fang ◽  
V. Prasad
Keyword(s):  
Thin Film ◽  
Process Model ◽  
Thin Film Deposition ◽  
Low Pressure ◽  
Film Deposition ◽  
Particle Methods ◽  
Scale Model ◽  
Physical Parameters ◽  
Working Pressure ◽  
Pressure System

ABSTRACTTitanium (Ti) is widely used to improve the contact resistance with the underlying substrate in contact or via filling applications. As the critical dimensions of the electronic devices fall below 0.5 micron and the aspect ratio of the contact holes increases, it becomes more difficult to obtain a good coverage at the bottom of the contact. In our continuing effort to develop a better technology for the metallization of sub-micron liners [1, 2] using the sputtering process, we have constructed a feature scale model and have initiated an extensive study on the coverage of the contact liners. Our objective is to search for an alternative process technique to replace the current, widely-used collimated sputtering with the help of a realistic model that accounts for all important deposition phenomena such as the effect of the working pressure and the ion bombardment. Since the mean free path of the deposited atoms, particularly in a low pressure system, is comparable to the surface feature of the substrate, particle methods are more appropriate for the modeling of thin film formation phenomena and predictions of microstructures than the continuum approach. This is specially true in the case of sputter-deposition. In this paper, a simple two dimensional molecular dynamics model is used to predict the growth of the thin film. It allows us to study the effects of the physical parameters such as working pressure and ion energy as well as the influence of the geometric configuration, e.g., distance between the target and the substrate and the size of the contact hole. Simulations for long-throw/low-pressure sputtering and ionized magnetron sputtering are presented together with the experimental results for collimated sputtering.

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

Characterization of Y-Ba-Cu-O films grown on silicon substrates by sequential evaporation

1988 ◽  
Vol 46 ◽  
pp. 866-867
Author(s):  
E. L. Hall ◽  
A. Mogro-Campero ◽  
L. G. Turner ◽  
N. Lewis
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Superconducting Films ◽  
Electron Beam Evaporation ◽  
Film Deposition ◽  
Silicon Substrates ◽  
Superconducting Properties ◽  
Sequential Electron ◽  
Thin Superconducting Films

There is great interest in the growth of thin superconducting films of YBa2Cu3Ox on silicon, since this is a necessary first step in the use of this superconductor in a variety of possible electronic applications including interconnects and hybrid semiconductor/superconductor devices. However, initial experiments in this area showed that drastic interdiffusion of Si into the superconductor occurred during annealing if the Y-Ba-Cu-O was deposited direcdy on Si or SiO2, and this interdiffusion destroyed the superconducting properties. This paper describes the results of the use of a zirconia buffer layer as a diffusion barrier in the growth of thin YBa2Cu3Ox films on Si. A more complete description of the growth and characterization of these films will be published elsewhere.Thin film deposition was carried out by sequential electron beam evaporation in vacuum onto clean or oxidized single crystal Si wafers. The first layer evaporated was 0.4 μm of zirconia.

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