Electrochemical properties of mercapto additives on ecofriendly electroless copper thin film deposition

2020 ◽  
Vol 14 (7) ◽  
2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-553-Pr3-560 ◽  
Author(s):  
W. Zhuang ◽  
L. J. Charneski ◽  
D. R. Evans ◽  
S. T. Hsu ◽  
Z. Tang ◽  
...  

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1860
Author(s):  
Jeonghun Yun ◽  
Yeongae Kim ◽  
Caitian Gao ◽  
Moobum Kim ◽  
Jae Yoon Lee ◽  
...  

The use of Prussian blue analogues (PBA) materials in electrochemical energy storage and harvesting has gained much interest, necessitating the further clarification of their electrochemical characteristics. However, there is no well-defined technique for manufacturing PBA-based microelectrochemical devices because the PBA film deposition method has not been well studied. In this study, we developed the following deposition method for growing copper hexacyanoferrate (CuHCFe) thin film: copper thin film is immersed into a potassium hexacyanoferrate solution, following which the redox reaction induces the spontaneous deposition of CuHCFe thin film on the copper thin film. The film grown via this method showed compatibility with conventional photolithography processes, and the micropattern of the CuHCFe thin film was successfully defined by a lift-off process. A microelectrochemical device based on the CuHCFe thin film was fabricated via micropatterning, and the sodium ion diffusivity in CuHCFe was measured. The presented thin film deposition method can deposit PBAs on any surface, including insulating substrates, and it can extend the utilization of PBA thin films to various applications.


2002 ◽  
Vol 750 ◽  
Author(s):  
Hanchen Huang ◽  
H. L. Wei ◽  
H. Y. Liang ◽  
C. H. Woo ◽  
X. X. Zhang

ABSTRACTIn this paper, we present a preliminary study of texture development during copper thin film deposition. Using direct current (DC) magnetron sputtering technique, we deposit copper films on a SiO2/Si(111) substrate. A thin layer of copper of <111> texture first develops, and another thin layer of <110> ensues. As deposition continues, a third layer of copper of <111> texture forms on the top, leading to a copper thin film of alternating <111> and <110> textures. The multiple layers of copper thin films of alternating textures form during continuous deposition without changing deposition conditions. The film morphology is characterized with scanning electron microscopy (SEM) and atomic force microscopy (AFM), and the texture with X-ray diffraction (XRD). Based on anisotropic elastic analyses and molecular dynamics simulations, we propose a model of texture evolution during the formation of multilayers, attributing the texture evolution to the competition of surface and strain energies.


2001 ◽  
Vol 384 (2) ◽  
pp. 185-188 ◽  
Author(s):  
K. Kordás ◽  
S. Leppävuori ◽  
A. Uusimäki ◽  
Thomas F. George ◽  
L. Nánai ◽  
...  

Copper electroless plating using polyhydroxylic alcohol was studied electrochemically using Dimethylamineborane(DMAB) as reducing agent. Copper methanesulphonate bath was used with Glycerol as the complexing agent and Potassium hydroxide as pH adjuster. The electroless bath was optimized by addition of 1 ppm concentration of stabilizers at 11.50 ± 0.25 pH. Tolytriazole(TTA) and Cytosine(CYS) are used as stabilizers and their effects on plating bath were studied and reported. Surface morphologies of the electroless copper coated epoxy substrates were investigated using Scanning Electron Microscope (SEM) and surface roughness by Atomic Force Microscopic (AFM) analysis. Crystallite size and specific surface area of copper thin film were observed by X-ray diffraction (XRD). Electrochemical characteristics were studied by Cyclic Voltammetry (CV). The physical parameters of the deposition shows that TTA influenced the copper coating while the CYS does not show much effect.


Author(s):  
M. Grant Norton ◽  
C. Barry Carter

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.


Author(s):  
E. L. Hall ◽  
A. Mogro-Campero ◽  
L. G. Turner ◽  
N. Lewis

There is great interest in the growth of thin superconducting films of YBa2Cu3Ox on silicon, since this is a necessary first step in the use of this superconductor in a variety of possible electronic applications including interconnects and hybrid semiconductor/superconductor devices. However, initial experiments in this area showed that drastic interdiffusion of Si into the superconductor occurred during annealing if the Y-Ba-Cu-O was deposited direcdy on Si or SiO2, and this interdiffusion destroyed the superconducting properties. This paper describes the results of the use of a zirconia buffer layer as a diffusion barrier in the growth of thin YBa2Cu3Ox films on Si. A more complete description of the growth and characterization of these films will be published elsewhere.Thin film deposition was carried out by sequential electron beam evaporation in vacuum onto clean or oxidized single crystal Si wafers. The first layer evaporated was 0.4 μm of zirconia.


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