Crystalline quality of ZnSe thin films grown on GaAs by pulsed laser deposition in He and Ar ambients

By pulsed laser deposition, lead potassium niobate Pb2KNb5O15 was grown on (001) oriented Gd3Ga5O12 substrate using a platinum buffer layer. The PKN thin films were characterized by X-Ray diffraction and Scanning Electron Microscopy (SEM). The dependence of their structural properties as a function of the deposition parameters was studied. It has been found that the out of plane orientation of PKN film depends on the oxygen pressure used during the growth. Indeed, PKN thin film is oriented [001] for low pressure and is oriented [530] for high pressure. For these two orientations, the crystalline quality of PKN film was determined using omega scans.

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Dependence of N2 pressure on the crystal structure and surface quality of AlN thin films deposited via pulsed laser deposition technique at room temperature

Applied Surface Science ◽

10.1016/j.apsusc.2008.06.190 ◽

2008 ◽

Vol 255 (5) ◽

pp. 2057-2062 ◽

Cited By ~ 25

Author(s):

Gaurav Shukla ◽

Alika Khare

Keyword(s):

Crystal Structure ◽

Thin Films ◽

Pulsed Laser Deposition ◽

Surface Quality ◽

Room Temperature ◽

Pulsed Laser ◽

Laser Deposition ◽

Deposition Technique

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Unusual Growth Modes in Pulsed Laser Deposition of ZnSe Thin Films on GaAs

Materials Science Forum ◽

10.4028/www.scientific.net/msf.287-288.535 ◽

1998 ◽

Vol 287-288 ◽

pp. 535-538 ◽

Cited By ~ 1

Author(s):

L.M. Kukreja ◽

P. Bhattacharya ◽

T. Ganguli ◽

B.M. Pandey ◽

K.C. Rustagi

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Growth Modes ◽

Znse Thin Films

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Optical properties of Co-doped ZnSe thin films synthesized by pulsed laser deposition

Thin Solid Films ◽

10.1016/j.tsf.2019.137599 ◽

2019 ◽

Vol 692 ◽

pp. 137599 ◽

Cited By ~ 2

Author(s):

Shufeng Li ◽

Li Wang ◽

Xueqiong Su ◽

Yong Pan ◽

Dongwen Gao ◽

...

Keyword(s):

Thin Films ◽

Optical Properties ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Znse Thin Films ◽

Co Doped

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Influence of oxygen background pressure on crystalline quality of SrTiO3 films grown on MgO by pulsed laser deposition

Applied Physics Letters ◽

10.1063/1.120011 ◽

1997 ◽

Vol 71 (12) ◽

pp. 1709-1711 ◽

Cited By ~ 22

Author(s):

R. Kalyanaraman ◽

R. D. Vispute ◽

S. Oktyabrsky ◽

K. Dovidenko ◽

K. Jagannadham ◽

...

Keyword(s):

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Crystalline Quality

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Advanced Properties of Silicon Oxynitride (SiOxNy) Thin Films Prepared by Pulsed Laser Deposition

MRS Proceedings ◽

10.1557/proc-388-115 ◽

1995 ◽

Vol 388 ◽

Author(s):

R.-F. Xiao ◽

L.C. Ng ◽

H.B. Liao

Keyword(s):

Thin Films ◽

Kinetic Energy ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Chemical Vapor ◽

Silicon Oxynitride ◽

Laser Deposition ◽

Chemical Solution ◽

Conventional Chemical Vapor Deposition

AbstractA pulsed laser deposition technique has been used to grow silicon oxynitride (SiOxNy) thin films at low deposition temperatures (25°C - 300°C). the thin films were found to be quite smooth in surface morphology, extremely inert in chemical solution and highly transparent in the optical range of 0.3 μm to 5 μm. the refractive index was tunable between 1.4 - 2.1 by the addition of oxygen in substitution of nitrogen in the film, and the dielectric constant is much larger than the similar films grown by conventional chemical vapor deposition. the high quality of the SiOxNy films deposited at such low temperatures was resulted from the large kinetic energy carried by the impinging particles created by the ablation of a high-power pulsed excimer laser. the kinetic energy of the impinged particles on the substrate provides thermal energy for surface diffusion and relaxation.

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XRD study on the effect of the deposition condition on pulsed laser deposition of ZnO films

Open Physics ◽

10.2478/s11534-008-0062-9 ◽

2008 ◽

Vol 6 (3) ◽

Cited By ~ 4

Author(s):

Bao Man ◽

Hong Xi ◽

Chuan Chen ◽

Mei Liu ◽

Jing Wei

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Deposition Temperature ◽

Laser Energy ◽

Pulsed Laser ◽

Laser Deposition ◽

Crystalline Quality ◽

Zno Thin Films ◽

Laser Source ◽

Zno Films

AbstractUsing a pulsed laser deposition (PLD) process on a ZnO target in an oxygen atmosphere, thin films of this material have been deposited on Si(111) substrates. An Nd: YAG pulsed laser with a wavelength of 1064 nm was used as the laser source. The influences of the deposition temperature, laser energy, annealing temperature and focus lens position on the crystallinity of ZnO films were analyzed by X-ray diffraction. The results show that the ZnO thin films obtained at the deposition temperature of 400°C and the laser energy of 250 mJ have the best crystalline quality in our experimental conditions. The ZnO thin films fabricated at substrate temperature 400°C were annealed at the temperatures from 400°C to 800°C in an atmosphere of N2. The results show that crystalline quality has been improved by annealing, the optimum temperature being 600°C. The position of the focusing lens has a strong influence on pulsed laser deposition of the ZnO thin films and the optimum position is 59.5 cm from the target surface for optics with a focal length of 70 cm.

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