Fabrication of a micro-patterned diamond film by site-selective plasma chemical vapor deposition

1998 ◽  
Vol 334 (1-2) ◽  
pp. 161-164 ◽  
Author(s):  
Yukihiro Sakamoto ◽  
Matsufumi Takaya ◽  
Hiroyuki Sugimura ◽  
Osamu Takai ◽  
Nobuyuki Nakagiri
Keyword(s):  
Chemical Vapor Deposition ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Site Selective

Intermittent growth of a diamond film by direct current hot cathode plasma chemical vapor deposition

Carbon ◽  
2013 ◽  
Vol 51 ◽  
pp. 437 ◽  
Author(s):  
Hong-wei Jiang ◽  
Hai-liang Huang ◽  
Xiang-hua Jia ◽  
Long-cheng Yin ◽  
Yu-qiang Chen ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Direct Current ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Cathode Plasma ◽  
Plasma Chemical Vapor Deposition

LATERAL OVERGROWTH OF DIAMOND FILMS ON METAL MASKED SUBSTRATE BY MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION

2002 ◽  
Vol 16 (06n07) ◽  
pp. 841-844 ◽  
Author(s):  
H. YAMAMOTO ◽  
Y. NAOI ◽  
Y. FUJII ◽  
Y. SHINTANI
Keyword(s):  
Chemical Vapor Deposition ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Crystal Nucleation ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Mask Material

We have grown laterally overgrown diamond films on stripe patterned silicon substrates by microwave plasma chemical vapor deposition. Titanium was used as the mask material and stripe patterns were fabricated using conventional photolithographic method. The selective growth area and the metal mask part order to enhance the crystal nucleation was performed before photolithographic process. SEM observation revealed that the diamond film was laterally overgrown on titanium mask. The result width of diamond film was 16 μm. The grain size on mask region was about three times as large as that g rown on nucleation region.

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