CN x thin films grown by pulsed laser deposition: Raman, infrared and X-ray photoelectron spectroscopy study

ZnO thin films were deposited on n-Si (111) substrates at various oxygen partial pressures by pulsed laser deposition (PLD). X-ray diffraction (XRD), scanning electron microscopy (SEM) were used to analyze the influence of the oxygen partial pressure on the crystallization and morphology of the ZnO thin films. An optimal crystallized ZnO thin film was observed at the oxygen partial pressure of 6.5Pa. X-ray photoelectron spectroscopy (XPS) was used to analyze the surface components and distribution status of various elments in ZnO thin films. It was found that ZnO thin films were grown in Zn-rich state.

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Pulsed laser deposition and characterization of conductive RuO2 thin films

Journal of Materials Research ◽

10.1557/jmr.1997.0195 ◽

1997 ◽

Vol 12 (6) ◽

pp. 1433-1436 ◽

Cited By ~ 24

Author(s):

A. Iembo ◽

F. Fuso ◽

E. Arimondo ◽

C. Ciofi ◽

G. Pennelli ◽

...

Keyword(s):

Electron Microscopy ◽

Thin Films ◽

Electrical Properties ◽

Pulsed Laser Deposition ◽

Photoelectron Spectroscopy ◽

Pulsed Laser ◽

Surface Characteristics ◽

Laser Deposition ◽

X Ray ◽

Substrate Interface

RuO2 thin films have been produced on silicon-based substrates by in situ pulsed laser deposition for the first time. The electrical properties, the surface characteristics, the crystalline structure, and the film-substrate interface of deposited samples have been investigated by 4-probe resistance versus temperature technique, scanning electron microscopy, x-ray photoelectron spectroscopy, x-ray diffraction, and transmission electron microscopy, respectively. The films show good electrical properties. The RuO2-substrate interface is very thin (≈3 nm), since it is not degraded by any annealing process. These two characteristics render our films suitable to be used as electrodes in PZT-based capacitors.

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ZrC Thin Films Grown by Pulsed Laser Deposition

MRS Proceedings ◽

10.1557/proc-780-y3.13 ◽

2003 ◽

Vol 780 ◽

Author(s):

V. Craciun ◽

D. Craciun ◽

J. M. Howard ◽

R. K. Singh

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Photoelectron Spectroscopy ◽

Pulsed Laser ◽

Surface Region ◽

Laser Deposition ◽

X Ray Diffraction ◽

X Ray ◽

Si Substrates ◽

Crystalline Films

AbstractZrC thin films were grown on Si substrates by the pulsed laser deposition (PLD) technique. X- ray photoelectron spectroscopy, x-ray diffraction and reflectivity, variable angle spectroscopic ellipsometry, and four point probe measurements were used to investigate the composition, density, thickness, surface morphology, optical and electrical properties of the grown structures. It has been found that crystalline films could be grown only by using fluences above 6 J/cm2 and substrate temperatures in excess of 500 °C. For a fluence of 10 J/cm2 and a substrate temperature of 700 °C, highly (100)-textured ZrC films exhibiting a cubic structure (a=0.469 nm) and a density of 6.7 g/cm3 were deposited. The use of a low-pressure atmosphere of C2H2 had a beneficial effect on crystallinity and stoichiometry of the films. All films contained high levels of oxygen contamination, especially in the surface region, because of the rather reactive nature of Zr atoms.

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Optical, Dielectric and X-ray Photoelectron Spectroscopy Studies on Nanocrystalline Ba(Zn1/3Ta2/3)O3 Thin Films Deposited by Pulsed Laser Deposition

Proceedings of the National Academy of Sciences India Section A Physical Sciences ◽

10.1007/s40010-014-0156-2 ◽

2014 ◽

Vol 84 (3) ◽

pp. 457-465

Author(s):

D. Pamu ◽

T. Santhosh Kumar ◽

B. Sreedhar ◽

Anil K. Bhatnagar

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Photoelectron Spectroscopy ◽

Pulsed Laser ◽

Laser Deposition ◽

X Ray ◽

Optical Dielectric ◽

Spectroscopy Studies

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Pulsed-Laser Deposition of TiNi Shape Memory Alloy Thin Films

MRS Proceedings ◽

10.1557/proc-672-o10.12 ◽

2001 ◽

Vol 672 ◽

Cited By ~ 1

Author(s):

X.Y. Chen ◽

Y.F. Lu ◽

Z.M. Ren ◽

L. Zhang ◽

J.P. Wang ◽

...

Keyword(s):

Thin Films ◽

Shape Memory Alloy ◽

Shape Memory ◽

Pulsed Laser Deposition ◽

Photoelectron Spectroscopy ◽

Pulsed Laser ◽

Laser Deposition ◽

Scanning Calorimetry ◽

X Ray ◽

Deposited Films

ABSTRACTThin films of TiNi shape memory alloy (SMA) have been prepared by pulsed-laser deposition (PLD) at different substrate temperatures. The stoichiometry, crystallinity, and morphology of the deposited films were characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and atom force microscopy (AFM). The transformation behavior and crystallization temperatures were investigated by differential scanning calorimetry (DSC). It is found that the Ni content of the deposited films ranges from 46.7 to 52.0 at.%. The crystallization temperature of the amorphous films is around 460°C. The activation energy of the crystallization process is determined by Kissinger's method to be 301 kJ/mol. The martensitic transformation temperature of the annealed Ti-51.5 at.% Ni film is –20.8°C.

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Reactive Pulsed Laser Deposition of Microcrystalline Ge-based Thin Films

MRS Proceedings ◽

10.1557/proc-762-a6.11 ◽

2003 ◽

Vol 762 ◽

Cited By ~ 1

Author(s):

Matthew R. Wills ◽

Ruth Shinar ◽

Alan P. Constant

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Photoelectron Spectroscopy ◽

Pulsed Laser ◽

Growth Conditions ◽

Laser Deposition ◽

Degree Of Crystallinity ◽

X Ray ◽

Starting Point ◽

Crystalline Films

AbstractPulsed laser deposition (PLD) was used to grow microcrystalline thin films of germanium (Ge) and Ge-carbon (Ge,C) alloys on fused quartz and silicon substrates at substrate temperatures 25°C ≤ Ts ≤ 325°C. The films were analyzed structurally with x-ray diffraction (XRD), optically, electrically with four-point probe measurements, and chemically with x-ray photoelectron spectroscopy (XPS). XRD results displayed a varying degree of crystallinity, with the most crystalline films obtained at Ts > 150°C. The resistivity of the Ge films decreased with increasing temperature, displaying a significant decrease for the films deposited at Ts ≥ 230°C. The growth conditions for Ge films served as a starting point for low-temperature deposition of Ge,C alloys with up to 5% C. The effects of Ts and carbon concentration on film properties are discussed.

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Femtosecond Pulsed Laser Deposition of Chromium Diboride-Rich Thin Films

Coatings ◽

10.3390/coatings9120777 ◽

2019 ◽

Vol 9 (12) ◽

pp. 777 ◽

Cited By ~ 1

Author(s):

Angela De Bonis ◽

Agostino Galasso ◽

Alessandro Latini ◽

Julietta V. Rau ◽

Antonio Santagata ◽

...

Keyword(s):

Electron Microscopy ◽

Thin Films ◽

Pulsed Laser Deposition ◽

Photoelectron Spectroscopy ◽

Protective Coatings ◽

Pulsed Laser ◽

Laser Deposition ◽

Chromium Diboride ◽

X Ray ◽

Structural Applications

Chromium borides are promising candidates for several structural applications including protective coatings for materials exposed to corrosive and abrasive environments. In this paper the pulsed laser deposition of chromium diboride-rich thin films has been carried out in vacuum by using a frequency doubled Nd:glass laser with a pulse duration of 250 fs. The films have been deposited at different substrate temperatures and characterized by X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy and transmission electron microscopy. Lastly, the film’s hardness has been studied by Vickers indentation technique. The results indicate that only the films deposited at a substrate temperature of 500 °C are crystalline and formed by chromium diboride, together with a certain amount of boron and chromium, which suggests that, as main mechanism, a process taking place on the surface from atoms and ions from the gas phase. This hypothesis has been confirmed by the study of the plasma produced by the ablation process.

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Epitaxial EuO thin films by pulsed laser deposition monitored by in situ x-ray photoelectron spectroscopy

Thin Solid Films ◽

10.1016/j.tsf.2010.04.071 ◽

2010 ◽

Vol 518 (18) ◽

pp. 5173-5176 ◽

Cited By ~ 18

Author(s):

J.N. Beukers ◽

J.E. Kleibeuker ◽

G. Koster ◽

D.H.A. Blank ◽

G. Rijnders ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Photoelectron Spectroscopy ◽

Pulsed Laser ◽

Laser Deposition ◽

X Ray

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The Structural and Morphology of (La0.7Sr0.3)MnO3 Thin Films Prepared by Pulsed Laser Deposition

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.150-151.908 ◽

2010 ◽

Vol 150-151 ◽

pp. 908-911 ◽

Cited By ~ 1

Author(s):

Wei Rao ◽

Jun Yu

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Photoelectron Spectroscopy ◽

Perovskite Phase ◽

Pulsed Laser ◽

Laser Deposition ◽

X Ray Diffraction ◽

X Ray ◽

Force Microscopy ◽

Atomic Force

(La0.7Sr0.3)MnO3 (LSMO) thin films were prepared on Si (100) substrate by pulsed laser deposition (PLD). Both structure and surface morphology of the films were investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). Furthermore, the chemical states and chemical composition of the films were determined by X-ray photoelectron spectroscopy (XPS) near the surface. The results indicate that the films grown on Si (100) substrates have a single pseudo cubic perovskite phase structure with a high (100) orientation. The XPS results show that La, Sr and Mn exist mainly in the forms of perovskite structure and a SrO layer was found on outermost surface.

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XPS Analysis of ZnO Thin Films Obtained by Pulsed Laser Deposition

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.383-390.6293 ◽

2011 ◽

Vol 383-390 ◽

pp. 6293-6296 ◽

Cited By ~ 3

Author(s):

Jian Ting He ◽

Bo Xue Tan ◽

Yuan Bin Su ◽

Shu Lian Yang ◽

Qin Qin Wei

Keyword(s):

Thin Films ◽

Oxygen Partial Pressure ◽

Partial Pressure ◽

Pulsed Laser Deposition ◽

Photoelectron Spectroscopy ◽

Pulsed Laser ◽

Laser Deposition ◽

Zno Thin Films ◽

X Ray ◽

Partial Pressures

Highly c-axis oriented ZnO thin films were deposited on n-Si (111) substrate at various oxygen partial pressures by pulsed laser deposition (PLD). X-ray diffraction (XRD), Atomic force microscopy (AFM) were used to analyze the influence of the oxygen partial pressure on the crystallization and morphology of the ZnO thin films. X-ray photoelectron spectroscopy (XPS) was used to analyze relationships between chemical shifts of XPS energy spectra and stoichiometric ratios of ZnO thin films, and quantitative relationships between content of Zn, O and oxygen partial pressures. An optimal crystallized and stoichiometric ZnO thin film was observed at the oxygen partial pressure of 6.5Pa.

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