Optical, Dielectric and X-ray Photoelectron Spectroscopy Studies on Nanocrystalline Ba(Zn1/3Ta2/3)O3 Thin Films Deposited by Pulsed Laser Deposition

2014 ◽  
Vol 84 (3) ◽  
pp. 457-465
Author(s):  
D. Pamu ◽  
T. Santhosh Kumar ◽  
B. Sreedhar ◽  
Anil K. Bhatnagar
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray ◽  
Optical Dielectric ◽  
Spectroscopy Studies

Growth and Characterization of ZnO Thin Films Grown by Pulsed Laser Deposition

2011 ◽  
Vol 383-390 ◽  
pp. 6289-6292
Author(s):  
Jian Ting He ◽  
Bo Xue Tan ◽  
Qin Qin Wei ◽  
Yuan Bin Su ◽  
Shu Lian Yang
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
X Ray ◽  
Partial Pressures

ZnO thin films were deposited on n-Si (111) substrates at various oxygen partial pressures by pulsed laser deposition (PLD). X-ray diffraction (XRD), scanning electron microscopy (SEM) were used to analyze the influence of the oxygen partial pressure on the crystallization and morphology of the ZnO thin films. An optimal crystallized ZnO thin film was observed at the oxygen partial pressure of 6.5Pa. X-ray photoelectron spectroscopy (XPS) was used to analyze the surface components and distribution status of various elments in ZnO thin films. It was found that ZnO thin films were grown in Zn-rich state.

Pulsed laser deposition and characterization of conductive RuO2 thin films

1997 ◽  
Vol 12 (6) ◽  
pp. 1433-1436 ◽  
Author(s):  
A. Iembo ◽  
F. Fuso ◽  
E. Arimondo ◽  
C. Ciofi ◽  
G. Pennelli ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Electrical Properties ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Surface Characteristics ◽  
Laser Deposition ◽  
X Ray ◽  
Substrate Interface

RuO2 thin films have been produced on silicon-based substrates by in situ pulsed laser deposition for the first time. The electrical properties, the surface characteristics, the crystalline structure, and the film-substrate interface of deposited samples have been investigated by 4-probe resistance versus temperature technique, scanning electron microscopy, x-ray photoelectron spectroscopy, x-ray diffraction, and transmission electron microscopy, respectively. The films show good electrical properties. The RuO2-substrate interface is very thin (≈3 nm), since it is not degraded by any annealing process. These two characteristics render our films suitable to be used as electrodes in PZT-based capacitors.

ZrC Thin Films Grown by Pulsed Laser Deposition

2003 ◽  
Vol 780 ◽  
Author(s):  
V. Craciun ◽  
D. Craciun ◽  
J. M. Howard ◽  
R. K. Singh
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Surface Region ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Crystalline Films

AbstractZrC thin films were grown on Si substrates by the pulsed laser deposition (PLD) technique. X- ray photoelectron spectroscopy, x-ray diffraction and reflectivity, variable angle spectroscopic ellipsometry, and four point probe measurements were used to investigate the composition, density, thickness, surface morphology, optical and electrical properties of the grown structures. It has been found that crystalline films could be grown only by using fluences above 6 J/cm2 and substrate temperatures in excess of 500 °C. For a fluence of 10 J/cm2 and a substrate temperature of 700 °C, highly (100)-textured ZrC films exhibiting a cubic structure (a=0.469 nm) and a density of 6.7 g/cm3 were deposited. The use of a low-pressure atmosphere of C2H2 had a beneficial effect on crystallinity and stoichiometry of the films. All films contained high levels of oxygen contamination, especially in the surface region, because of the rather reactive nature of Zr atoms.

Pulsed-Laser Deposition of TiNi Shape Memory Alloy Thin Films

2001 ◽  
Vol 672 ◽  
Author(s):  
X.Y. Chen ◽  
Y.F. Lu ◽  
Z.M. Ren ◽  
L. Zhang ◽  
J.P. Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Shape Memory Alloy ◽  
Shape Memory ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Scanning Calorimetry ◽  
X Ray ◽  
Deposited Films

ABSTRACTThin films of TiNi shape memory alloy (SMA) have been prepared by pulsed-laser deposition (PLD) at different substrate temperatures. The stoichiometry, crystallinity, and morphology of the deposited films were characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and atom force microscopy (AFM). The transformation behavior and crystallization temperatures were investigated by differential scanning calorimetry (DSC). It is found that the Ni content of the deposited films ranges from 46.7 to 52.0 at.%. The crystallization temperature of the amorphous films is around 460°C. The activation energy of the crystallization process is determined by Kissinger's method to be 301 kJ/mol. The martensitic transformation temperature of the annealed Ti-51.5 at.% Ni film is –20.8°C.

Reactive Pulsed Laser Deposition of Microcrystalline Ge-based Thin Films

2003 ◽  
Vol 762 ◽  
Author(s):  
Matthew R. Wills ◽  
Ruth Shinar ◽  
Alan P. Constant
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Laser Deposition ◽  
Degree Of Crystallinity ◽  
X Ray ◽  
Starting Point ◽  
Crystalline Films

AbstractPulsed laser deposition (PLD) was used to grow microcrystalline thin films of germanium (Ge) and Ge-carbon (Ge,C) alloys on fused quartz and silicon substrates at substrate temperatures 25°C ≤ Ts ≤ 325°C. The films were analyzed structurally with x-ray diffraction (XRD), optically, electrically with four-point probe measurements, and chemically with x-ray photoelectron spectroscopy (XPS). XRD results displayed a varying degree of crystallinity, with the most crystalline films obtained at Ts > 150°C. The resistivity of the Ge films decreased with increasing temperature, displaying a significant decrease for the films deposited at Ts ≥ 230°C. The growth conditions for Ge films served as a starting point for low-temperature deposition of Ge,C alloys with up to 5% C. The effects of Ts and carbon concentration on film properties are discussed.

scholarly journals Femtosecond Pulsed Laser Deposition of Chromium Diboride-Rich Thin Films

Coatings ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 777 ◽  
Author(s):  
Angela De Bonis ◽  
Agostino Galasso ◽  
Alessandro Latini ◽  
Julietta V. Rau ◽  
Antonio Santagata ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Protective Coatings ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Chromium Diboride ◽  
X Ray ◽  
Structural Applications

Chromium borides are promising candidates for several structural applications including protective coatings for materials exposed to corrosive and abrasive environments. In this paper the pulsed laser deposition of chromium diboride-rich thin films has been carried out in vacuum by using a frequency doubled Nd:glass laser with a pulse duration of 250 fs. The films have been deposited at different substrate temperatures and characterized by X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy and transmission electron microscopy. Lastly, the film’s hardness has been studied by Vickers indentation technique. The results indicate that only the films deposited at a substrate temperature of 500 °C are crystalline and formed by chromium diboride, together with a certain amount of boron and chromium, which suggests that, as main mechanism, a process taking place on the surface from atoms and ions from the gas phase. This hypothesis has been confirmed by the study of the plasma produced by the ablation process.

Epitaxial EuO thin films by pulsed laser deposition monitored by in situ x-ray photoelectron spectroscopy

2010 ◽  
Vol 518 (18) ◽  
pp. 5173-5176 ◽  
Author(s):  
J.N. Beukers ◽  
J.E. Kleibeuker ◽  
G. Koster ◽  
D.H.A. Blank ◽  
G. Rijnders ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray
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