CrN films deposited by rf reactive sputtering using a plasma emission monitoring control

Vacuum ◽  
2002 ◽  
Vol 66 (3-4) ◽  
pp. 227-231 ◽  
Author(s):  
Shozo Inoue ◽  
Futami Okada ◽  
Keiji Koterazawa
Keyword(s):  
Reactive Sputtering ◽  
Plasma Emission ◽  
Emission Monitoring

High Rate Deposition of Al-doped ZnO (AZO) by Reactive Sputtering (1); Unipolar Pulsing with Plasma Emission Control

2008 ◽  
Author(s):  
Yuzo Shigesato ◽  
Kento Hirohata ◽  
Yasutaka Nishi ◽  
Nobuto Oka ◽  
Yasushi Sato ◽  
...  
Keyword(s):  
Emission Control ◽  
Reactive Sputtering ◽  
High Rate ◽  
Plasma Emission ◽  
Doped Zno

Plasma emission monitoring (PEM) controlled DC reactive sputtered ZnO:Al thin films

Vacuum ◽  
2012 ◽  
Vol 86 (12) ◽  
pp. 1939-1944 ◽  
Author(s):  
P.D. Nsimama ◽  
G.A. Niklasson ◽  
M.E. Samiji ◽  
G.W. Mbise ◽  
J. Wennerberg
Keyword(s):  
Thin Films ◽  
Plasma Emission ◽  
Emission Monitoring

Thermochromic Properties of Vanadium Oxide Films Prepared by R-HIPIMS Using Closed-Loop Controlled with Plasma Emission Monitoring

2018 ◽  
Vol 940 ◽  
pp. 114-119
Author(s):  
Chien Jen Tang ◽  
Wei Hsuan Hsu ◽  
Ching Tang Li
Keyword(s):  
Vanadium Dioxide ◽  
Emission Intensity ◽  
Pid Controller ◽  
Plasma Emission ◽  
X Ray Diffraction ◽  
X Ray ◽  
Emission Monitoring ◽  
Thermochromic Properties ◽  
Electrical Source ◽  
Plasma Emission Intensity

The vanadium dioxide films were deposited by reactive high-power impulse magnetron sputtering for different plasma emission intensity at the substrate temperature of 310 °C. The setpoint of plasma emission intensity was controlled by a PID controller with plasma-emission-monitoring. The vanadium dioxide films characteristics were measured by optical spectrophotometer, X-ray diffraction and electrical source meter.

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