Optical and electronic characterization of transition layer in thin film Au-GaAs Schottky barrier

AbstractPoly-Si Schottky-barrier thin-film transistors (SB-TFTs) were fabricated and characterized. In this study, SB-TFTs were first fabricated by using a conventional sidewall spacer to isolate the gate and S/D regions during salicidation. However, it was found that these SB-TFTs depict very poor on/off current ratio (<103) as well as severe GIDL (gate-induced drain leakage)-like leakage current. To overcome these shortcomings, a novel SB-TFT structure is also fabricated in this study to improve the device performance. The new device consists of a field-induced-drain region (FID), which is an offset drain region controlled by a metal field-plate lying on top of the passivation oxide. The FID region is sandwiched between the silicided drain and the active channel region. Carrier types and the conductivity of the transistor are controlled by the metal field-plate. Since the metal field plate is formed simultaneously with the regular metal patterning, no additional processing steps are required. Our results show that the new device can significantly improve the on/off current ratio to over 106 for both p- and n-channel operations, while effectively eliminating the GIDL-like leakage.

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Characterization of Y-Ba-Cu-O films grown on silicon substrates by sequential evaporation

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100106399 ◽

1988 ◽

Vol 46 ◽

pp. 866-867

Author(s):

E. L. Hall ◽

A. Mogro-Campero ◽

L. G. Turner ◽

N. Lewis

Keyword(s):

Thin Film ◽

Thin Film Deposition ◽

Superconducting Films ◽

Electron Beam Evaporation ◽

Film Deposition ◽

Silicon Substrates ◽

Superconducting Properties ◽

Sequential Electron ◽

Thin Superconducting Films

There is great interest in the growth of thin superconducting films of YBa2Cu3Ox on silicon, since this is a necessary first step in the use of this superconductor in a variety of possible electronic applications including interconnects and hybrid semiconductor/superconductor devices. However, initial experiments in this area showed that drastic interdiffusion of Si into the superconductor occurred during annealing if the Y-Ba-Cu-O was deposited direcdy on Si or SiO2, and this interdiffusion destroyed the superconducting properties. This paper describes the results of the use of a zirconia buffer layer as a diffusion barrier in the growth of thin YBa2Cu3Ox films on Si. A more complete description of the growth and characterization of these films will be published elsewhere.Thin film deposition was carried out by sequential electron beam evaporation in vacuum onto clean or oxidized single crystal Si wafers. The first layer evaporated was 0.4 μm of zirconia.

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Microstructural and fractographic characterization of B4C-Al cermets tested under dynamic and static loading

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100154780 ◽

1989 ◽

Vol 47 ◽

pp. 562-563

Author(s):

Gyeung Ho Kim ◽

Mehmet Sarikaya ◽

D. L. Milius ◽

I. A. Aksay

Keyword(s):

Thin Film ◽

Mechanical Properties ◽

Fracture Toughness ◽

Static Loading ◽

Carbon Deposition ◽

Full Density ◽

Unique Combination ◽

Strong Component ◽

Reaction Products

Cermets are designed to optimize the mechanical properties of ceramics (hard and strong component) and metals (ductile and tough component) into one system. However, the processing of such systems is a problem in obtaining fully dense composite without deleterious reaction products. In the lightweight (2.65 g/cc) B4C-Al cermet, many of the processing problems have been circumvented. It is now possible to process fully dense B4C-Al cermet with tailored microstructures and achieve unique combination of mechanical properties (fracture strength of over 600 MPa and fracture toughness of 12 MPa-m1/2). In this paper, microstructure and fractography of B4C-Al cermets, tested under dynamic and static loading conditions, are described.The cermet is prepared by infiltration of Al at 1150°C into partially sintered B4C compact under vacuum to full density. Fracture surface replicas were prepared by using cellulose acetate and thin-film carbon deposition. Samples were observed with a Philips 3000 at 100 kV.

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