High resolution, non-destructive measurement and characterization of fracture apertures

1998 ◽  
Vol 35 (8) ◽  
pp. 1037-1050 ◽  
Author(s):  
A. Keller
2018 ◽  
Vol 25 (1) ◽  
pp. 16-19 ◽  
Author(s):  
Jens Rehanek ◽  
Christopher J. Milne ◽  
Jakub Szlachetko ◽  
Joanna Czapla-Masztafiak ◽  
Jörg Schneider ◽  
...  

One of the remaining challenges for accurate photon diagnostics at X-ray free-electron lasers (FELs) is the shot-to-shot, non-destructive, high-resolution characterization of the FEL pulse spectrum at photon energies between 2 keV and 4 keV, the so-called tender X-ray range. Here, a spectrometer setup is reported, based on the von Hamos geometry and using elastic scattering as a fingerprint of the FEL-generated spectrum. It is capable of pulse-to-pulse measurement of the spectrum with an energy resolution (ΔE/E) of 10−4, within a bandwidth of 2%. The Tender X-ray Single-Shot Spectrometer (TXS) will grant to experimental scientists the freedom to measure the spectrum in a single-shot measurement, keeping the transmitted beam undisturbed. It will enable single-shot reconstructions for easier and faster data analysis.


ANRI ◽  
2020 ◽  
pp. 3-17
Author(s):  
Oleg ivanov ◽  
Viktor Potapov ◽  
Evgeniy Stepanov

The history and current state of CORAD method for non-destructive measurement of soil and concrete contamination characteristics by collimated spectrometric detectors with minimal assumptions about the spatial contamination distribution are considered.


2005 ◽  
Vol 82 (1) ◽  
pp. 84-91
Author(s):  
Shriram Ramanathan ◽  
Chuan Hu ◽  
Evan Pickett ◽  
Patrick Morrow ◽  
Yongmei Liu ◽  
...  

2002 ◽  
Vol 717 ◽  
Author(s):  
G. M. Cohen ◽  
P.M. Mooney ◽  
H. Park ◽  
C. Cabral ◽  
E.C. Jones

AbstractHigh-resolution x-ray diffraction (HRXRD) was used to monitor silicon-on-insulator (SOI) processing steps. The use of HRXRD is attractive since it is non-destructive and can be applied directly to product wafers. We show the usefulness of this technique for the characterization of amorphizing implants for shallow junctions, solid phase re-crystallization of implanted junctions, cobalt-silicide formation, and oxidation; all are critical processes for CMOS fabrication on SOI.


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