scholarly journals A compact and versatile tender X-ray single-shot spectrometer for online XFEL diagnostics

2018 ◽  
Vol 25 (1) ◽  
pp. 16-19 ◽  
Author(s):  
Jens Rehanek ◽  
Christopher J. Milne ◽  
Jakub Szlachetko ◽  
Joanna Czapla-Masztafiak ◽  
Jörg Schneider ◽  
...  
Keyword(s):  
Data Analysis ◽  
High Resolution ◽  
Elastic Scattering ◽  
Single Shot ◽  
Free Electron Lasers ◽  
Pulse Spectrum ◽  
Transmitted Beam ◽  
X Ray ◽  
Non Destructive

One of the remaining challenges for accurate photon diagnostics at X-ray free-electron lasers (FELs) is the shot-to-shot, non-destructive, high-resolution characterization of the FEL pulse spectrum at photon energies between 2 keV and 4 keV, the so-called tender X-ray range. Here, a spectrometer setup is reported, based on the von Hamos geometry and using elastic scattering as a fingerprint of the FEL-generated spectrum. It is capable of pulse-to-pulse measurement of the spectrum with an energy resolution (ΔE/E) of 10−4, within a bandwidth of 2%. The Tender X-ray Single-Shot Spectrometer (TXS) will grant to experimental scientists the freedom to measure the spectrum in a single-shot measurement, keeping the transmitted beam undisturbed. It will enable single-shot reconstructions for easier and faster data analysis.

scholarly journals Single shot XUV nanoimaging using an intense femtosecond soft X-ray laser

2019 ◽  
Vol 205 ◽  
pp. 02006
Author(s):  
Michael Zürch ◽  
Frederik Tuitje ◽  
Tobias Helk ◽  
Julian Gautier ◽  
Fabian Tissandier ◽  
...  
Keyword(s):  
High Resolution ◽  
Arrival Time ◽  
High Harmonic ◽  
Single Shot ◽  
X Ray ◽  
Nanoscale Imaging

We report the direct wavefront characterization of an intense ultrafast high-harmonic-seeded soft X-ray laser (λ=32.8 nm) depending on the arrival time of the seed pulses by high-resolution ptychographic imaging and subsequently perform single-shot nanoscale imaging.

Characterization and Monitoring of Silicon-on-Insulator Fabrication Processes by High-Resolution X-ray Diffraction

2002 ◽  
Vol 717 ◽  
Author(s):  
G. M. Cohen ◽  
P.M. Mooney ◽  
H. Park ◽  
C. Cabral ◽  
E.C. Jones
Keyword(s):  
High Resolution ◽  
Solid Phase ◽  
Silicon On Insulator ◽  
Silicide Formation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Shallow Junctions ◽  
Non Destructive ◽  
Processing Steps

AbstractHigh-resolution x-ray diffraction (HRXRD) was used to monitor silicon-on-insulator (SOI) processing steps. The use of HRXRD is attractive since it is non-destructive and can be applied directly to product wafers. We show the usefulness of this technique for the characterization of amorphizing implants for shallow junctions, solid phase re-crystallization of implanted junctions, cobalt-silicide formation, and oxidation; all are critical processes for CMOS fabrication on SOI.

X-Ray Nanotomography (XRMT) Tool for Non-Destructive High-Resolution Imaging of ICs

2001 ◽  
Author(s):  
Wenbing Yun ◽  
Steve Wang ◽  
David Scott ◽  
Kenneth W. Nill ◽  
Waleed S. Haddad
Keyword(s):  
High Resolution ◽  
Process Development ◽  
3D Visualization ◽  
Tomographic Reconstruction ◽  
Reconstruction Algorithms ◽  
X Ray ◽  
Visualization Software ◽  
Volumetric Reconstruction ◽  
Resolution Imaging ◽  
Non Destructive

Abstract A high-resolution table-sized x-ray nanotomography (XRMT) tool has been constructed that shows the promise of nondestructively imaging the internal structure of a full IC stack with a spatial resolution better than 100 nm. Such a tool can be used to detect, localize, and characterize buried defects in the IC. By collecting a set of X-ray projections through the full IC (which may include tens of micrometers of silicon substrate and several layers of Cu interconnects) and applying tomographic reconstruction algorithms to these projections, a 3D volumetric reconstruction can be obtained, and analyzed for defects using 3D visualization software. XRMT is a powerful technique that will find use in failure analysis and IC process development, and may facilitate or supplant investigations using SEM, TEM, and FIB tools, which generally require destructive sample preparation and a vacuum environment.

Three dimensional characterization of laser ablation craters using high resolution X-ray computed tomography

2018 ◽  
Vol 139 ◽  
pp. 75-82 ◽  
Author(s):  
A.H. Galmed ◽  
A. du Plessis ◽  
S.G. le Roux ◽  
E. Hartnick ◽  
H. Von Bergmann ◽  
...  
Keyword(s):  
Computed Tomography ◽  
Laser Ablation ◽  
High Resolution ◽  
Three Dimensional ◽  
X Ray ◽  
X Ray Computed

scholarly journals High-resolution characterization of the forbidden Si 200 and Si 222 reflections

2015 ◽  
Vol 48 (2) ◽  
pp. 528-532 ◽  
Author(s):  
Peter Zaumseil
Keyword(s):  
High Resolution ◽  
Angular Range ◽  
Angular Divergence ◽  
X Ray Diffraction ◽  
Multiple Diffraction ◽  
Diffraction Plane ◽  
X Ray ◽  
Sample Orientation ◽  
Plane Sample

The occurrence of the basis-forbidden Si 200 and Si 222 reflections in specular X-ray diffraction ω–2Θ scans is investigated in detail as a function of the in-plane sample orientation Φ. This is done for two different diffractometer types with low and high angular divergence perpendicular to the diffraction plane. It is shown that the reflections appear for well defined conditions as a result of multiple diffraction, and not only do the obtained peaks vary in intensity but additional features like shoulders or even subpeaks may occur within a 2Θ range of about ±2.5°. This has important consequences for the detection and verification of layer peaks in the corresponding angular range.

High Resolution X-Ray Characterization of Sub-Micron Periodic Domain Structures in Lithium Niobate Crystals

2007 ◽  
Vol 352 (1) ◽  
pp. 25-34 ◽  
Author(s):  
M. Bazzan ◽  
N. Argiolas ◽  
C. Sada ◽  
P. Mazzoldi ◽  
S. Grilli ◽  
...  
Keyword(s):  
High Resolution ◽  
Lithium Niobate ◽  
Periodic Domain ◽  
X Ray ◽  
Domain Structures ◽  
Lithium Niobate Crystals

scholarly journals Toward unsupervised single-shot diffractive imaging of heterogeneous particles using X-ray free-electron lasers

2013 ◽  
Vol 21 (23) ◽  
pp. 28729 ◽  
Author(s):  
Hyung Joo Park ◽  
N. Duane Loh ◽  
Raymond G. Sierra ◽  
Christina Y. Hampton ◽  
Dmitri Starodub ◽  
...  
Keyword(s):  
Free Electron ◽  
Single Shot ◽  
Free Electron Lasers ◽  
Diffractive Imaging ◽  
X Ray

X-ray topo-tomography studies of linear dislocations in silicon single crystals

2018 ◽  
Vol 51 (6) ◽  
pp. 1616-1622 ◽  
Author(s):  
Victor Asadchikov ◽  
Alexey Buzmakov ◽  
Felix Chukhovskii ◽  
Irina Dyachkova ◽  
Denis Zolotov ◽  
...  
Keyword(s):  
Numerical Analysis ◽  
High Resolution ◽  
Single Crystals ◽  
Complete Characterization ◽  
Reconstruction Technique ◽  
Algebraic Reconstruction Technique ◽  
X Ray ◽  
Laboratory Setup ◽  
Simultaneous Algebraic Reconstruction Technique

This article describes complete characterization of the polygonal dislocation half-loops (PDHLs) introduced by scratching and subsequent bending of an Si(111) crystal. The study is based on the X-ray topo-tomography technique using both a conventional laboratory setup and the high-resolution X-ray image-detecting systems at the synchrotron facilities at KIT (Germany) and ESRF (France). Numerical analysis of PDHL images is performed using the Takagi–Taupin equations and the simultaneous algebraic reconstruction technique (SART) tomographic algorithm.

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