The influence of target temperature and photon assistance on the radiation defect formation in low-fluence ion-implanted silicon

2001 ◽  
Vol 174 (3) ◽  
pp. 304-310 ◽  
Author(s):  
M.Yu. Barabanenkov ◽  
J. Gyulai ◽  
A.V. Leonov ◽  
V.N. Mordkovich ◽  
N.M. Omelyanovskaya ◽  
...  
Keyword(s):  
Radiation Defect ◽  
Defect Formation ◽  
Target Temperature ◽  
Ion Implanted

Defect Formation by Ion Implantation in Cz-Si Studied by a Monoenergetic Positron Beam

1992 ◽  
Vol 262 ◽  
Author(s):  
A. Uedono ◽  
Y. Ujihira ◽  
L. Wei ◽  
Y. Tabuki ◽  
S. Tanigawa ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Ion Implantation ◽  
Defect Formation ◽  
Positron Beam ◽  
Low Energy ◽  
Doppler Broadening ◽  
Positron Energy ◽  
Annealing Experiments ◽  
Incident Positron ◽  
Ion Implanted

ABSTRACTVacancy-type defects in ion implanted Si were studied by a monoenergetic positron beam. The depth-distributions of the defects were obtained from measurements of Doppler broadening profiles of the positron annihilation as a function of incident positron energy. The results showed that a size of vacany-clusters introduced by 150-keV P+-ion implantation was found to be smaller than that introduced by 2-MeV P+-ion implantation. This was attributed to an overlap of collision cascades in low-energy (150 keV) ion implanted specimens. From isochronal annealing experiments for 80-keV B+- and 150-keV P+-ion implanted specimens, the defected region was removed by 1200 °C annealing, however, for 2-MeV P+-implanted specimen, two-types of oxygen-vacancy complexes were found to coexist even after 1200 °C annealing.

Radiation defect formation in lithium tetraborate (LTB) single crystals

1994 ◽  
Vol 132 (4) ◽  
pp. 371-376 ◽  
Author(s):  
A. O. Matkovskii ◽  
D. Yu. Sugak ◽  
Ya. V. Burak ◽  
G. I. Malovichko ◽  
V. G. Grachov
Keyword(s):  
Single Crystals ◽  
Radiation Defect ◽  
Defect Formation ◽  
Lithium Tetraborate

scholarly journals Relationship between Markov Chains and Radiation Defect Formation Processes by Ion Irradiation

2014 ◽  
Vol 9 (3) ◽  
Author(s):  
Anatoly Ivanovich Kupchishin ◽  
Evgeniy Vladimirovich Shmygalev ◽  
Tatyana Alexandrovna Shmygaleva ◽  
Almaz Binuruli Jorabayev
Keyword(s):  
Markov Chains ◽  
Radiation Defect ◽  
Defect Formation ◽  
Ion Irradiation ◽  
Formation Processes

Effect of the interface on radiation defect formation in gallium arsenide

1979 ◽  
Vol 42 (3-4) ◽  
pp. 249-251 ◽  
Author(s):  
O. Yu. Borkovskaya ◽  
N. L. Dmitruk ◽  
R. V. Konakova ◽  
V. G. Litovchenko ◽  
Yu. A. Tkhorik ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Radiation Defect ◽  
Defect Formation
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