Radiation defect formation at ion implantation of semiconductors in the presence of force fields

1979 ◽  
Vol 51 (2) ◽  
pp. 629-640 ◽  
Author(s):  
N. P. Morozov ◽  
D. I. Tetelbaum
Keyword(s):  
Ion Implantation ◽  
Radiation Defect ◽  
Defect Formation ◽  
Force Fields

The Effect of Photoexcitation on Formation of Radiation Defects in Si

1990 ◽  
Vol 201 ◽  
Author(s):  
V. N. Mordkovich ◽  
A. B. Danilin ◽  
Yu. N. Erokhin ◽  
S. N. Boldyrev
Keyword(s):  
Ion Implantation ◽  
Radiation Damage ◽  
Radiation Defect ◽  
Damage Accumulation ◽  
Defect Formation ◽  
Charge Carriers ◽  
Light Illumination ◽  
Radiation Defects ◽  
Electronic Subsystem ◽  
Nonequilibrium Electron

AbstractPhotoexcitation of the Si electronic subsystem during ion implantation was found to be able to control radiation damage accumulation. Conditions when additional light illumination during ion bombardment suppresses radiation defect formation are determined. The model of effect observed taking into account recombination of nonequilibrium electron and holes is proposed. Coefficient between the change in amount of damage accumulated and the rate of nonequilibrium charge carriers generation is estimated.

Defect Formation by Ion Implantation in Cz-Si Studied by a Monoenergetic Positron Beam

1992 ◽  
Vol 262 ◽  
Author(s):  
A. Uedono ◽  
Y. Ujihira ◽  
L. Wei ◽  
Y. Tabuki ◽  
S. Tanigawa ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Ion Implantation ◽  
Defect Formation ◽  
Positron Beam ◽  
Low Energy ◽  
Doppler Broadening ◽  
Positron Energy ◽  
Annealing Experiments ◽  
Incident Positron ◽  
Ion Implanted

ABSTRACTVacancy-type defects in ion implanted Si were studied by a monoenergetic positron beam. The depth-distributions of the defects were obtained from measurements of Doppler broadening profiles of the positron annihilation as a function of incident positron energy. The results showed that a size of vacany-clusters introduced by 150-keV P+-ion implantation was found to be smaller than that introduced by 2-MeV P+-ion implantation. This was attributed to an overlap of collision cascades in low-energy (150 keV) ion implanted specimens. From isochronal annealing experiments for 80-keV B+- and 150-keV P+-ion implanted specimens, the defected region was removed by 1200 °C annealing, however, for 2-MeV P+-implanted specimen, two-types of oxygen-vacancy complexes were found to coexist even after 1200 °C annealing.

Radiation defect formation in lithium tetraborate (LTB) single crystals

1994 ◽  
Vol 132 (4) ◽  
pp. 371-376 ◽  
Author(s):  
A. O. Matkovskii ◽  
D. Yu. Sugak ◽  
Ya. V. Burak ◽  
G. I. Malovichko ◽  
V. G. Grachov
Keyword(s):  
Single Crystals ◽  
Radiation Defect ◽  
Defect Formation ◽  
Lithium Tetraborate

scholarly journals Relationship between Markov Chains and Radiation Defect Formation Processes by Ion Irradiation

2014 ◽  
Vol 9 (3) ◽  
Author(s):  
Anatoly Ivanovich Kupchishin ◽  
Evgeniy Vladimirovich Shmygalev ◽  
Tatyana Alexandrovna Shmygaleva ◽  
Almaz Binuruli Jorabayev
Keyword(s):  
Markov Chains ◽  
Radiation Defect ◽  
Defect Formation ◽  
Ion Irradiation ◽  
Formation Processes

Effect of the interface on radiation defect formation in gallium arsenide

1979 ◽  
Vol 42 (3-4) ◽  
pp. 249-251 ◽  
Author(s):  
O. Yu. Borkovskaya ◽  
N. L. Dmitruk ◽  
R. V. Konakova ◽  
V. G. Litovchenko ◽  
Yu. A. Tkhorik ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Radiation Defect ◽  
Defect Formation
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