In-depth concentration distribution of Ar in Si surface after low-energy Ar+ ion sputtering

2002 ◽  
Vol 190 (1-4) ◽  
pp. 598-601 ◽  
Author(s):  
D.W. Oh ◽  
S.K. Oh ◽  
H.J. Kang ◽  
H.I. Lee ◽  
D.W. Moon
Keyword(s):  
Concentration Distribution ◽  
Low Energy ◽  
Ion Sputtering ◽  
Depth Concentration

scholarly journals Characterization of nitrogen species incorporated into graphite using low energy nitrogen ion sputtering

2016 ◽  
Vol 18 (1) ◽  
pp. 458-465 ◽  
Author(s):  
Hisao Kiuchi ◽  
Takahiro Kondo ◽  
Masataka Sakurai ◽  
Donghui Guo ◽  
Junji Nakamura ◽  
...  
Keyword(s):  
Low Energy ◽  
Nitrogen Species ◽  
Ion Sputtering ◽  
Zigzag Edge ◽  
Nitrogen Doped ◽  
Doping Mechanism ◽  
Nitrogen Ions ◽  
Nitrogen Ion

The well-controlled nitrogen doped graphite with graphitic nitrogen located in the zigzag edge and/or vacancy sites can be realized using the low energy nitrogen sputtering. The doping mechanism of nitrogen ions is also discussed.

AFM ANALYSIS OF QUANTUM DOT STRUCTURES INDUCED BY ION SPUTTERING WITH DIFFERENT TIPS

2003 ◽  
Vol 10 (06) ◽  
pp. 837-841
Author(s):  
M. XU ◽  
C. TEICHERT
Keyword(s):  
Quantum Dot ◽  
High Hardness ◽  
Complete Information ◽  
Low Energy ◽  
Order Structure ◽  
Ion Sputtering ◽  
Soft Or ◽  
Surface Information ◽  
Complete Surface ◽  
Afm Analysis

With tips of different hardness, we analyzed the effect of the hardness and shape of the actual AFM tip on the measurement of the best GaSb quantum dot (QD) structures induced by low energy Ar + sputtering. The comparison indicated that the complete information on the detailed dot shape and order structure can be determined with the hard and good tip, while with the soft or worn tip some information on the dot height and shape cannot be obtained. Our results suggest that, in order to obtain the complete surface information, the high hardness and good AFM tip should be used for semiconductor QD structures.

scholarly journals A study of directional effect of depth-concentration distribution for implanted heavy ions with low energies in dry peanut seeds

2003 ◽  
Vol 52 (10) ◽  
pp. 2530
Author(s):  
Xie Jing-Yi ◽  
Zhou Hong-Yu ◽  
Wang Ping ◽  
Ding Xiao-Ji ◽  
Liu Zhi-Guo ◽  
...  
Keyword(s):  
Heavy Ions ◽  
Concentration Distribution ◽  
Directional Effect ◽  
Low Energies ◽  
Depth Concentration

Nonlinear effects in low-energy ion sputtering of solids

2020 ◽  
Vol 38 (5) ◽  
pp. 053203 ◽  
Author(s):  
Yuriy Kudriavtsev ◽  
Rene Asomoza ◽  
Angelica Hernandez ◽  
Dmitry Yu. Kazantsev ◽  
Boris Ya. Ber ◽  
...  
Keyword(s):  
Nonlinear Effects ◽  
Low Energy ◽  
Ion Sputtering

Ordering of Ga Nanodroplets by Low-Energy Ion Sputtering

2013 ◽  
pp. 99-114 ◽  
Author(s):  
Sabina Koukourinkova ◽  
Zhiming M. Wang ◽  
Jiang Wu ◽  
Xingliang Xu ◽  
Mourad Benamara ◽  
...  
Keyword(s):  
Low Energy ◽  
Ion Sputtering

Emission Spectrographic Analysis of Surfaces with an Ion-Sputtering Source

1976 ◽  
Vol 30 (5) ◽  
pp. 510-515 ◽  
Author(s):  
M. E. Waitlevertch ◽  
J. K. Hurwitz
Keyword(s):  
Power Supply ◽  
Sample Surface ◽  
Argon Atmosphere ◽  
Concentration Profiles ◽  
Spectrographic Analysis ◽  
Ion Sputtering ◽  
Square Wave ◽  
Source Current ◽  
Depth Concentration

An ion-sputtering source was installed and evaluated as an emission spectrographic source for the analysis of metal surfaces and for the determination of in-depth concentration profiles. This source generates a direct current glow discharge in a low-pressure argon atmosphere between a hollow stainless-steel anode and the sample (the cathode) and sputters material at a controlled rate from the sample surface. The resultant spectrum of the sputtered material is recorded photographically, and the analysis is completed by conventional spectrographic techniques. The power supply of the source can be operated in either a constant dc mode or a square-wave dc mode, but better repeatability and accuracy have been achieved with the square-wave dc mode. Before any significant sputtering occurs with this source, the voltage must exceed 240 Volts, the threshold sputtering voltage. The sputtering rate increases with both source current and voltage. This source has been used for the quantitative analysis of the surface of steel products and the determination of changes in composition with depth below the surface.

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