Nanoripple formation onTiO2(110)by low-energy grazing incidence ion sputtering

2010 ◽  
Vol 82 (3) ◽  
Author(s):  
Tim Luttrell ◽  
Matthias Batzill
Keyword(s):  
Grazing Incidence ◽  
Low Energy ◽  
Ion Sputtering

Layer-by-Layer Sputtering and Ultrathin Ion Implantation by Low-Energy Grazing Ion Bombardment

2005 ◽  
Vol 908 ◽  
Author(s):  
Abdurauf Dzhurakhalov ◽  
Sirojiddin Rahmatov ◽  
Nigorakhon Teshabaeva ◽  
Maqsud Yusupov
Keyword(s):  
Ion Implantation ◽  
Crystal Orientation ◽  
Ion Bombardment ◽  
Grazing Incidence ◽  
Low Energy ◽  
Layer By Layer ◽  
Ion Sputtering ◽  
Depth Distributions

AbstractThe ion sputtering and implantation into GaAs(001) surface at 1-5 keV Se+ grazing ion bombardment have been investigated by computer simulation.The azimuth angular dependencies of sputtering and penetration yield at grazing incidence have been calculated. It was observed that these dependencies correlate the crystal orientation. The depth distributions of 1-5 keV Se ions implanted into GaAs(001) for several azimuth angles of incidence have been presented.

scholarly journals Characterization of nitrogen species incorporated into graphite using low energy nitrogen ion sputtering

2016 ◽  
Vol 18 (1) ◽  
pp. 458-465 ◽  
Author(s):  
Hisao Kiuchi ◽  
Takahiro Kondo ◽  
Masataka Sakurai ◽  
Donghui Guo ◽  
Junji Nakamura ◽  
...  
Keyword(s):  
Low Energy ◽  
Nitrogen Species ◽  
Ion Sputtering ◽  
Zigzag Edge ◽  
Nitrogen Doped ◽  
Doping Mechanism ◽  
Nitrogen Ions ◽  
Nitrogen Ion

The well-controlled nitrogen doped graphite with graphitic nitrogen located in the zigzag edge and/or vacancy sites can be realized using the low energy nitrogen sputtering. The doping mechanism of nitrogen ions is also discussed.

AFM ANALYSIS OF QUANTUM DOT STRUCTURES INDUCED BY ION SPUTTERING WITH DIFFERENT TIPS

2003 ◽  
Vol 10 (06) ◽  
pp. 837-841
Author(s):  
M. XU ◽  
C. TEICHERT
Keyword(s):  
Quantum Dot ◽  
High Hardness ◽  
Complete Information ◽  
Low Energy ◽  
Order Structure ◽  
Ion Sputtering ◽  
Soft Or ◽  
Surface Information ◽  
Complete Surface ◽  
Afm Analysis

With tips of different hardness, we analyzed the effect of the hardness and shape of the actual AFM tip on the measurement of the best GaSb quantum dot (QD) structures induced by low energy Ar + sputtering. The comparison indicated that the complete information on the detailed dot shape and order structure can be determined with the hard and good tip, while with the soft or worn tip some information on the dot height and shape cannot be obtained. Our results suggest that, in order to obtain the complete surface information, the high hardness and good AFM tip should be used for semiconductor QD structures.

Nonlinear effects in low-energy ion sputtering of solids

2020 ◽  
Vol 38 (5) ◽  
pp. 053203 ◽  
Author(s):  
Yuriy Kudriavtsev ◽  
Rene Asomoza ◽  
Angelica Hernandez ◽  
Dmitry Yu. Kazantsev ◽  
Boris Ya. Ber ◽  
...  
Keyword(s):  
Nonlinear Effects ◽  
Low Energy ◽  
Ion Sputtering

High Resolution Auger Depth Profiles Using a Dual Ion Gun System

1985 ◽  
Vol 54 ◽  
Author(s):  
S. Ingrey ◽  
J.P.D. Cook
Keyword(s):  
Electron Beam ◽  
Depth Profiling ◽  
Depth Resolution ◽  
Grazing Incidence ◽  
Low Energy ◽  
Multilayer Structures ◽  
Dramatic Decrease ◽  
Depth Profiles ◽  
Order Of Magnitude ◽  
Magnitude Improvement

A dual ion gun system has been proposed (D.E. Sykes et al, Appl. Surf. Sci. 5(1980)103) to reduce texturing and improve depth resolution during Auger sputter depth profiling. We have evaluated this ion gun configuration by profiling a variety of multilayer structures. With careful alignment of the guns, we have obtained a dramatic decrease in ion-induced texturing often seen when a single ion gun is used. This effect was particularly pronounced for polycrystalline Al films on Si where an order of magnitude improvement in depth resolution was achieved. Further refinements of the technique include the use of low energy (IkeV) grazing incidence xenon ions and a small electron beam probe area. Depth profiles obtained from Ni/Cr, W/Si, and GaAs/GaAlAs multilayer structures will also be discussed.

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