Ordering of Ga Nanodroplets by Low-Energy Ion Sputtering

Author(s):  
Sabina Koukourinkova ◽  
Zhiming M. Wang ◽  
Jiang Wu ◽  
Xingliang Xu ◽  
Mourad Benamara ◽  
...  
Keyword(s):  
2016 ◽  
Vol 18 (1) ◽  
pp. 458-465 ◽  
Author(s):  
Hisao Kiuchi ◽  
Takahiro Kondo ◽  
Masataka Sakurai ◽  
Donghui Guo ◽  
Junji Nakamura ◽  
...  

The well-controlled nitrogen doped graphite with graphitic nitrogen located in the zigzag edge and/or vacancy sites can be realized using the low energy nitrogen sputtering. The doping mechanism of nitrogen ions is also discussed.


2003 ◽  
Vol 10 (06) ◽  
pp. 837-841
Author(s):  
M. XU ◽  
C. TEICHERT

With tips of different hardness, we analyzed the effect of the hardness and shape of the actual AFM tip on the measurement of the best GaSb quantum dot (QD) structures induced by low energy Ar + sputtering. The comparison indicated that the complete information on the detailed dot shape and order structure can be determined with the hard and good tip, while with the soft or worn tip some information on the dot height and shape cannot be obtained. Our results suggest that, in order to obtain the complete surface information, the high hardness and good AFM tip should be used for semiconductor QD structures.


2020 ◽  
Vol 38 (5) ◽  
pp. 053203 ◽  
Author(s):  
Yuriy Kudriavtsev ◽  
Rene Asomoza ◽  
Angelica Hernandez ◽  
Dmitry Yu. Kazantsev ◽  
Boris Ya. Ber ◽  
...  

2005 ◽  
Vol 908 ◽  
Author(s):  
Abdurauf Dzhurakhalov ◽  
Sirojiddin Rahmatov ◽  
Nigorakhon Teshabaeva ◽  
Maqsud Yusupov

AbstractThe ion sputtering and implantation into GaAs(001) surface at 1-5 keV Se+ grazing ion bombardment have been investigated by computer simulation.The azimuth angular dependencies of sputtering and penetration yield at grazing incidence have been calculated. It was observed that these dependencies correlate the crystal orientation. The depth distributions of 1-5 keV Se ions implanted into GaAs(001) for several azimuth angles of incidence have been presented.


2008 ◽  
Vol 8 (8) ◽  
pp. 4227-4230
Author(s):  
D. Paramanik ◽  
S. Majumdar ◽  
S. R. Sahoo ◽  
S. N. Sahu ◽  
S. Varma

We report formation of self organized InP nano dots using 3 keV Ar+ ion sputtering, at 15° incidence from surface normal, on InP(111) surface. Morphology and optical properties of the sputtered surface, as a function of sputtering time, have been investigated by Scanning Probe Microscopy and Raman Scattering techniques. Uniform patterns of nano dots are observed for different durations of sputtering. The sizes and the heights of these nano dots vary between 10 to 100 nm and 20 to 40 nm, respectively. With increasing of sputtering time, t, the size and height of these nano dots increases up to a certain sputtering time tc. However beyond tc, the dots break down into smaller nanostructures, and as a result, the size and height of these nanostructures decrease. The uniformity and regularity of these structures are also lost for sputtering beyond tc. The crossover behavior is also observed in the rms surface roughness. Raman investigations of InP nano dots reveal optical phonon softening due to phonon confinement in the surface nano dots.


Carbon ◽  
2013 ◽  
Vol 62 ◽  
pp. 365-373 ◽  
Author(s):  
Liang Zhang ◽  
Yifan Ye ◽  
Dingling Cheng ◽  
Wenhua Zhang ◽  
Haibin Pan ◽  
...  

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