Characterization of nitrogen species incorporated into graphite using low energy nitrogen ion sputtering

The well-controlled nitrogen doped graphite with graphitic nitrogen located in the zigzag edge and/or vacancy sites can be realized using the low energy nitrogen sputtering. The doping mechanism of nitrogen ions is also discussed.

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Temperature-Dependent Tribological Improvements in Low-Energy Nitrogen Ion Implanted Vanadium-Titanium Alloys

World Tribology Congress III, Volume 2 ◽

10.1115/wtc2005-64203 ◽

2005 ◽

Author(s):

C. Ballesteros ◽

J. A. Garci´a ◽

M. I. Orti´z ◽

R. Rodri´guez ◽

M. Varela

Keyword(s):

Tribological Properties ◽

Low Energy ◽

Temperature Dependent ◽

Structural Modifications ◽

Nanocomposite Layer ◽

Implantation Temperature ◽

Transmission Electron ◽

Nitrogen Ion ◽

Tribological Characterization

A detailed tribological characterization of low-energy, nitrogen implanted V5 at. %Ti alloy is presented. Samples were nitrogen-implanted at an accelerating voltage of 1.2 kV and 1 mA/cm2, up to a dose of 1E19 ions/cm2. The tribological properties of the alloys: microhardness, friction coefficient and wear resistance, have improved after ion implantation and this improvement increases as the implantation temperature increases. The microstructure of the alloys were analysed by transmission electron microscopy. A direct correlation between structural modifications of the nitrogen implanted layer and the improvement in their tribological properties is obtained. For samples implanted at 848 K a nanocomposite layer where the reinforcement particles are TiN precipitates forms. TiN precipitation appears as the responsible of the improvement in the tribological properties.

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Optical characterization of low-energy nitrogen-ion doped GaAs

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/s0168-583x(96)01119-6 ◽

1997 ◽

Vol 127-128 ◽

pp. 437-441 ◽

Cited By ~ 14

Author(s):

Takayuki Shima ◽

Yunosuke Makita ◽

Shinji Kimura ◽

Tsutomu Iida ◽

Hirokazu Sanpei ◽

...

Keyword(s):

Optical Characterization ◽

Low Energy ◽

Nitrogen Ion

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Band alignment and Schottky behaviour of InN/GaN heterostructure grown by low-temperature low-energy nitrogen ion bombardment

RSC Advances ◽

10.1039/c4ra02533d ◽

2014 ◽

Vol 4 (52) ◽

pp. 27308-27314 ◽

Cited By ~ 7

Author(s):

Shibin Krishna TC ◽

Govind Gupta

Keyword(s):

Low Temperature ◽

Schottky Diodes ◽

Ion Bombardment ◽

Band Alignment ◽

Low Energy ◽

Nitrogen Ions ◽

Nitrogen Ion ◽

Gan Heterostructure

InN/GaN heterostructure based Schottky diodes are fabricated by low energetic nitrogen ions at 300 °C.

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Three-dimensional characterization of OTFT on modified hydrophobic flexible polymeric substrate by low energy Cs+ ion sputtering

Applied Surface Science ◽

10.1016/j.apsusc.2018.04.097 ◽

2018 ◽

Vol 448 ◽

pp. 628-635 ◽

Cited By ~ 6

Author(s):

Luca Tortora ◽

Marco Urbini ◽

Andrea Fabbri ◽

Paolo Branchini ◽

Luigi Mariucci ◽

...

Keyword(s):

Three Dimensional ◽

Low Energy ◽

Ion Sputtering ◽

Polymeric Substrate

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Study of Low-Energy Ion Assisted Epitaxy of Gan Films: Influence of the Initial Growth Rate

MRS Proceedings ◽

10.1557/proc-585-239 ◽

1999 ◽

Vol 585 ◽

Cited By ~ 4

Author(s):

J. W. Gerlach ◽

D. Schrupp ◽

R. Schwertberger ◽

B. Rauschenbach ◽

A. Anders

Keyword(s):

Growth Rate ◽

Defect Density ◽

Film Structure ◽

Low Energy ◽

Initial Growth ◽

Film Properties ◽

Ion Energy ◽

Atom Ratio ◽

Nitrogen Ion

AbstractThe deposition of thin epitaxial hexagonal gallium nitride films on c-plane sapphire by low-energy nitrogen ion assisted deposition is shown to result in films of high crystalline quality. The quality can be further heightened by using the concept of an isothermal growth rate ramp. Characterization of film structure, defect density distribution and surface topography by XRD, RBS/C, and AFM, respectively, reveals the importance of the nitrogen ion energy and the ion to atom ratio on the film properties.

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Characterization of low-energy excited states in the native state ensemble of non-myristoylated and myristoylated neuronal calcium sensor-1

Biochimica et Biophysica Acta (BBA) - Proteins and Proteomics ◽

10.1016/j.bbapap.2010.10.007 ◽

2011 ◽

Vol 1814 (2) ◽

pp. 334-344 ◽

Cited By ~ 4

Author(s):

Kousik Chandra ◽

Yogendra Sharma ◽

K.V.R. Chary

Keyword(s):

Excited States ◽

Low Energy ◽

Calcium Sensor ◽

Native State ◽

Neuronal Calcium Sensor ◽

State Ensemble

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Wear Behavior and Structural Characterization of a Nitrogen Implanted Ti6Al4V Alloy at Different Temperatures

MRS Proceedings ◽

10.1557/proc-27-711 ◽

1983 ◽

Vol 27 ◽

Cited By ~ 5

Author(s):

R. Martinella ◽

G. Chevallard ◽

C. Tosello

Keyword(s):

Wear Resistance ◽

Structural Characterization ◽

Wear Behavior ◽

Hardened Layer ◽

Structural Modifications ◽

Theory Comparison ◽

Different Temperatures ◽

Nitrogen Ions ◽

Wear Tests

ABSTRACTMechanically polished Ti6Al4V samples were implanted with 100 key nitrogen ions to a fluence of 5.1017 ions/cm2 at two different bulk tenneratures: 370°C and 470°C. Wear tests were carried out with a reciprocating slidina tribotester. Structural modifications and wear morphologies were studied by TEM and SEM. 370°C implanted sample showed the same wear behavior as unimplanted ones, while 470°C implanted sample showed better wear resistance because of a TiN hardened layer. Correlations- between microstructural modifications, wear behavior and mechanisms are reported: results agree with the delamination theory. Comparison with ion- and gas-nitrided samples are presented.

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