Charge carrier lifetime modification in silicon by high energy H+ or He+ ion implantation

1997 ◽  
Vol 127-128 ◽  
pp. 388-392 ◽  
Author(s):  
N.Q. Khánh ◽  
P. Tüttő ◽  
O. Buiu ◽  
E.N. Jároli ◽  
L.P. Bíró ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Ion Implantation ◽  
Carrier Lifetime ◽  
High Energy ◽  
Charge Carrier Lifetime

Charge Carrier Lifetime Modificaiton in Silicon by High Energy H+, He+ Ion Implantation

1997 ◽  
Vol 248-249 ◽  
pp. 101-106 ◽  
Author(s):  
N.Q. Khánh ◽  
P. Tüttö ◽  
E.N. Jároli ◽  
O. Buiu ◽  
L.P. Biró ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Ion Implantation ◽  
Carrier Lifetime ◽  
High Energy ◽  
Charge Carrier Lifetime

scholarly journals Extraordinarily High Minority Charge Carrier Lifetime Observed in Crystalline Silicon

Solar RRL ◽  
2021 ◽  
Author(s):  
Bernd Steinhauser ◽  
Tim Niewelt ◽  
Armin Richter ◽  
Rebekka Eberle ◽  
Martin Schubert
Keyword(s):  
Charge Carrier ◽  
Carrier Lifetime ◽  
Crystalline Silicon ◽  
Minority Charge Carrier ◽  
Charge Carrier Lifetime

scholarly journals Enhancing Charge Carrier Lifetime in Metal Oxide Photoelectrodes through Mild Hydrogen Treatment

2017 ◽  
Vol 7 (22) ◽  
pp. 1701536 ◽  
Author(s):  
Ji-Wook Jang ◽  
Dennis Friedrich ◽  
Sönke Müller ◽  
Marlene Lamers ◽  
Hannes Hempel ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Metal Oxide ◽  
Carrier Lifetime ◽  
Hydrogen Treatment ◽  
Charge Carrier Lifetime

scholarly journals Improved charge carrier lifetime in planar perovskite solar cells by bromine doping

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
David Kiermasch ◽  
Philipp Rieder ◽  
Kristofer Tvingstedt ◽  
Andreas Baumann ◽  
Vladimir Dyakonov
Keyword(s):  
Solar Cells ◽  
Charge Carrier ◽  
Carrier Lifetime ◽  
Perovskite Solar Cells ◽  
Charge Carrier Lifetime

Measurement of Copper in p-Type Silicon Using Charge-Carrier Lifetime Methods

2005 ◽  
Vol 108-109 ◽  
pp. 643-648 ◽  
Author(s):  
Marko Yli-Koski ◽  
Hele Savin ◽  
E. Saarnilehto ◽  
Antti Haarahiltunen ◽  
Juha Sinkkonen ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Room Temperature ◽  
Carrier Lifetime ◽  
Detection Sensitivity ◽  
Bulk Silicon ◽  
Recombination Activity ◽  
P Type ◽  
Copper Detection ◽  
Charge Carrier Lifetime

We compare SPV technique with µ−PCD for the determination of recombination activity of copper precipitates in p-Si. The copper precipitates were formed in bulk silicon through illumination at room temperature. We observed that the recombination activities of copper precipitates measured with SPV are higher than the ones measured with µ−PCD technique. However, it seems that the copper detection sensitivity is about the same with SPV and µ−PCD techniques.

scholarly journals A sol–gel biotemplating route with cellulose nanocrystals to design a photocatalyst for improving hydrogen generation

2020 ◽  
Vol 8 (21) ◽  
pp. 10779-10786 ◽  
Author(s):  
Cong Wang ◽  
Jian Li ◽  
Erwan Paineau ◽  
Abdelghani Laachachi ◽  
Christophe Colbeau-Justin ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Cellulose Nanocrystals ◽  
Carrier Lifetime ◽  
Hydrogen Generation ◽  
Light Harvesting ◽  
Sol Gel ◽  
Charge Carrier Lifetime

Light harvesting capability and charge carrier lifetime play critical roles in determining the photoefficiency of a photocatalyst.

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