Measurement of Copper in p-Type Silicon Using Charge-Carrier Lifetime Methods

2005 ◽  
Vol 108-109 ◽  
pp. 643-648 ◽  
Author(s):  
Marko Yli-Koski ◽  
Hele Savin ◽  
E. Saarnilehto ◽  
Antti Haarahiltunen ◽  
Juha Sinkkonen ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Room Temperature ◽  
Carrier Lifetime ◽  
Detection Sensitivity ◽  
Bulk Silicon ◽  
Recombination Activity ◽  
P Type ◽  
Copper Detection ◽  
Charge Carrier Lifetime

We compare SPV technique with µ−PCD for the determination of recombination activity of copper precipitates in p-Si. The copper precipitates were formed in bulk silicon through illumination at room temperature. We observed that the recombination activities of copper precipitates measured with SPV are higher than the ones measured with µ−PCD technique. However, it seems that the copper detection sensitivity is about the same with SPV and µ−PCD techniques.

Measurement of Copper in p-Type Silicon Using Charge-Carrier Lifetime Methods

2005 ◽  
pp. 643-648
Author(s):  
Marko Yli-Koski ◽  
Hele Savin ◽  
E. Saarnilehto ◽  
A. Haarahiltunen ◽  
Juha Sinkkonen ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Carrier Lifetime ◽  
Type Silicon ◽  
P Type ◽  
Charge Carrier Lifetime

The determination of charge-carrier lifetime in silicon

2008 ◽  
Vol 245 (9) ◽  
pp. 1865-1876 ◽  
Author(s):  
D. Klein ◽  
F. Wuensch ◽  
M. Kunst
Keyword(s):  
Charge Carrier ◽  
Carrier Lifetime ◽  
Charge Carrier Lifetime

scholarly journals Extraordinarily High Minority Charge Carrier Lifetime Observed in Crystalline Silicon

Solar RRL ◽  
2021 ◽  
Author(s):  
Bernd Steinhauser ◽  
Tim Niewelt ◽  
Armin Richter ◽  
Rebekka Eberle ◽  
Martin Schubert
Keyword(s):  
Charge Carrier ◽  
Carrier Lifetime ◽  
Crystalline Silicon ◽  
Minority Charge Carrier ◽  
Charge Carrier Lifetime
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