Monte Carlo simulation of kinetic electron emission from metal due to impact of heavy ions

Author(s):  
J Kawata ◽  
K Ohya
1989 ◽  
Vol 157 ◽  
Author(s):  
A.M. Mazzone

ABSTRACTIn this work a formalism for the evaluation of electronic losses of heavy ions with energy of few MeV in crystalline semiconductor targets is presented. The stopping values are used in a Monte Carlo simulation to calculate the ion range in silicon and in gallium arsenide for a random orientation of the target and under channelling conditions.


2014 ◽  
Vol 90 (5) ◽  
pp. 392-400 ◽  
Author(s):  
Ya-Yun Hsiao ◽  
Tzu-Hsiang Hung ◽  
Shu-Ju Tu ◽  
Chuan-Jong Tung

2002 ◽  
Vol 21 (2) ◽  
pp. 125-135 ◽  
Author(s):  
M. Beuve ◽  
M. Caron ◽  
P.D. Fainstein ◽  
M. Galassi ◽  
B. Gervais ◽  
...  

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