Laser deposition of thin films with varying substrate temperature during film growth

2002 ◽  
Vol 197-198 ◽  
pp. 348-351 ◽  
Author(s):  
W.D Song ◽  
M.H Hong ◽  
Y.F Lu ◽  
W.J Wang ◽  
S.M Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Film Growth ◽  
Laser Deposition

Pulsed Laser Deposition of Bi4Ti3O12 Thin Films on Sapphire Substrates

1994 ◽  
Vol 361 ◽  
Author(s):  
William Jo ◽  
T.W. Noh
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Film Growth ◽  
Narrow Range ◽  
Pulsed Laser ◽  
Growth Behavior ◽  
Laser Deposition ◽  
Sapphire Substrates ◽  
Deposition Parameters

ABSTRACTUsing pulsed laser deposition, Bi4Ti3O12 thin films were grown on (0001) and (1102) surfaces of Al2O3. Substrate temperature from 700 to 800 °C and oxygen pressure from 50 to 1000 mtorr were varied, and their effects on Bi4Ti3O12 film growth behavior was investigated. Only for a narrow range of deposition parameters, can highly oriented Bi4Ti3O12(104) films be grown on Al2O3(0001). Further, epitaxial BTO(004) films can be grown on Al2O3(1102). The growth behavior of preferential BTO film orientations can be explained in terms of atomic arrangements in the Bi4Ti3O12 and the Al2O3 planes.

Substrate Temperature and La0.9Sr0.1Ga0.8Mg0.2O3-δ Electrolyte Film Growth by Radio Frequency Magnetron Sputtering

2015 ◽  
Vol 833 ◽  
pp. 127-133
Author(s):  
Jie Yu ◽  
Jie Xing ◽  
Xiu Hua Chen ◽  
Wen Hui Ma ◽  
Rui Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Radio Frequency ◽  
Film Growth ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrolyte Film ◽  
Porous Anode

La0.9Sr0.1Ga0.8Mg0.2O3-δ (LSGM) electrolyte thin films were fabricated on La0.7Sr0.3Cr0.5Mn0.5O2.75 (LSCM) porous anode substrates by Radio Frequency (RF) magnetron sputtering method. The compatibility between LSGM and LSCM was examined. Microstructures of LSGM thin films fabricated were observed by scanning electron microscope (SEM). The effect of substrate temperature on LSGM thin films was clarified by X-ray Diffraction (XRD). Deposition rate increases firstly at the range of 50°C~150°C, and then decreases at the range of 150°C ~300°C. After annealing, perovskite structure with the same growth orientation forms at different substrate temperature. Crystallite size decreases at first, to the minimum point at 150°C, then increases as substrate temperature rises.

Ca2RuO4Thin Film Growth by Pulsed Laser Deposition

2004 ◽  
Vol 819 ◽  
Author(s):  
Xu Wang ◽  
Yan Xin ◽  
Hanoh Lee ◽  
Patricia A. Stampe ◽  
Robin J. Kennedy ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Electrical Transport ◽  
Film Growth ◽  
Pulsed Laser ◽  
High Sensitivity ◽  
Laser Deposition ◽  
Chemical Doping ◽  
Bulk Single Crystal ◽  
Electrical Transport Properties

AbstractBulk Ca2RuO4 is an antiferromagnetic Mott insulator with the metal-insulator transition above room temperature, and the Neel temperature at 113 K. There is strong coupling between crystal structures and magnetic, electronic phase transitions in this system. It exhibits high sensitivity to chemical doping and pressure that makes it very interesting material to study. We have epitaxially grown Ca2RuO4 thin films on LaAlO3 substrates by pulsed laser deposition technique. Growth conditions such as substrate temperature and O2 pressure were systematically varied in order to achieve high quality single-phase film. Crystalline quality and orientation of these films were characterized by X-ray diffractometry. Microstructure of the thin films was examined by transmission electron microscopy. The electrical transport properties were also measured and compared with bulk single crystal.

Pulsed Laser Deposition of Low-Resistivity Indium Tin Oxide Thin Films at Low Substrate Temperature

1999 ◽  
Vol 38 (Part 1, No. 5A) ◽  
pp. 2710-2716 ◽  
Author(s):  
Frederick Ojo Adurodija ◽  
Hirokazu Izumi ◽  
Tsuguo Ishihara ◽  
Hideki Yoshioka ◽  
Hiroshi Matsui ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Oxide Thin Films ◽  
Low Resistivity

The effects of substrate temperature and laser wavelength on the formation of carbon thin films by pulsed laser deposition

1999 ◽  
Vol 8 (2-5) ◽  
pp. 463-467 ◽  
Author(s):  
Tsuyoshi Yoshitake ◽  
Takashi Nishiyama ◽  
Hajime Aoki ◽  
Koji Suizu ◽  
Koji Takahashi ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Wavelength ◽  
Laser Deposition ◽  
Carbon Thin Films

INFLUENCE OF THE TECHNICAL PARAMETERS ON BIOACTIVE FILMS DEPOSITED BY PULSED LASER

2007 ◽  
Vol 14 (02) ◽  
pp. 283-291 ◽  
Author(s):  
YAFAN ZHAO ◽  
CHUANZHONG CHEN ◽  
MINGDA SONG ◽  
JIAN LIU
Keyword(s):  
Thin Films ◽  
Energy Density ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Atmosphere Pressure ◽  
Technical Parameters ◽  
Novel Technique ◽  
Post Annealing

Pulsed laser deposition (PLD), which is a novel technique in producing thin films in the recent years, shows unique advantages for the deposition of bioactive films. Research states of the technical parameters of the pulsed laser deposited bioactive films, including substrate temperature, atmosphere pressure, energy density, wavelength, post-annealing, target, deposition rate, and thickness of the films, are systematically reviewed. Processing-microstructure-property relationships of bioactive films by pulsed laser deposition are discussed. The application prospect is pointed as well.

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